This paper reports the production and characterisation of BGO scintillators doped with Cr3+. Single phase Bi4Ge3O12 in pure state and containing up to 1% of the Cr3+ was produced via a solid state route and its luminescent properties were investigated (absorption and emission spectra and radioluminescence). When excited at 200‐230 nm, pure BGO ceramics exhibit a wide photoluminescent band emission centred at 500 nm, assigned to Bi3+ internal transitions. For the doped samples under the same excitation, this wide band was superposed by the emission peaks of the dopant. Computer modelling was employed to help to understand the Cr3+ ‐ doping process in the BGO matrix. The incorporation of the Cr3+ dopant was modelled considering substitution at either Bi3+ or Ge4+ sites. A range of possible charge compensation schemes were devised and the corresponding reactions were used to calculate the energetically optimal defect. The predicted symmetry of the Cr3+ dopant was used to understand the optical properties of the material. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)