2006
DOI: 10.1590/s0103-97332006000600015
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Abstract: The Ogg-McCombe effective Hamiltonian for the electron in the conduction band together with the nonparabolic and effective-mass approximations were used in a theoretical study of the cyclotron effective mass and electron effective Landé g -factor in semiconductor GaAs-Ga 1−x Al x As quantum wells under an applied magnetic field parallel to the growth direction of the quantum well. Calculations are performed as a function of the applied magnetic field, and for different widths of the GaAs-Ga 1−x Al x As quantum… Show more

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Cited by 4 publications
(1 citation statement)
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“…It is observed that the Landé g factor increases as the dot radius is decreased for all the magnetic field strength. 26 It is observed that the Landé g factor becomes appreciable with the increase of magnetic field strength for larger dot radii. When the dot radius, R → 0, the effective Landé g factor increases and becomes the Landé g factor of the barrier as expected.…”
Section: Resultsmentioning
confidence: 91%
“…It is observed that the Landé g factor increases as the dot radius is decreased for all the magnetic field strength. 26 It is observed that the Landé g factor becomes appreciable with the increase of magnetic field strength for larger dot radii. When the dot radius, R → 0, the effective Landé g factor increases and becomes the Landé g factor of the barrier as expected.…”
Section: Resultsmentioning
confidence: 91%