Optical properties of type-I and II quantum dots

Abstract

This paper focuses on recent results on the optical properties of self-assembled quantum dots involving type-I InGaAs/GaAs and type-II InP/GaAs interfaces. In the first part, we focus on the InGaAs/GaAs quantum dots, that were used to study the influence of a two-dimensional electron gas on the optical emission of single quantum dots. In the second part, we present the results on type-II InP/GaAs quantum dots. In this system, we observed an experimental evidence indicating that the model used to interpret the blue shift of the type-II quantum well optical emission cannot be applied to type-II quantum dots.

Optical Processes in Nanostructured Semiconductors

“…The reason of the shift authors of the work Ref. [6] have explained by the existence of quantum dots InP /GaAs. We have taken into account the fact that increasing of laser intensity leads to increasing of energy of irradiated phonons.…”

Straddling SnSe2/SnS2 van der Waals tunneling heterostructures for high performance broadband photodetectors

“…51,58 Presently, type-I heterostructures possess distinctive properties that make them suitable for different optoelectronic applications such as quantum wells and quantum dots, however, their utilization as photodetectors is relatively limited, and there are only a few reports on their usage. 51,[58][59][60][61] Moreover, the exact details of the tunneling mechanism in these structures have not been fully comprehended yet. Therefore, illustrating the tunneling behavior in type-I band-arranged semiconductor vdW heterostructures can not only broad the range of band design options in heterostructure devices but also open up exciting possibilities for the application of vdW heterostructures in optoelectronic devices.…”