The anomalous dispersion of the disorder-induced and the second-order Raman Bands in Carbon Nanotubes

Pimenta, M. A.; Hanlon, Eugene B.; Marucci, A.; Cório, Paola; Brown, S. R.; Empedocles, S. A.; Bawendi, Moungi G.; Dresselhaus, G.; Dresselhaus, M. S.

doi:10.1590/s0103-97332000000200026

Cited by 69 publications

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“…Such stepwise dispersive behavior is in contrast to the more continuous dispersion observed in double-resonance processes involving the nanotube D and GЈ modes. 2,24 Upon careful analysis, these peaks are asymmetric with an exception of the peak at ϳ473 cm −1 . This ϳ473 cm −1 peak is assigned as the overtone of the RBM peak at 236 cm −1 , as will be discussed later.…”

Section: Resultsmentioning

confidence: 99%

Intermediate-frequency Raman modes for the lower optical transitions of semiconducting single-walled carbon nanotubes

2007

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A new class of intermediate-frequency modes ͑IFMs͒ associated with the E 22 S and E 11 S optical transitions of bundled HiPco single-walled carbon nanotubes ͑SWNTs͒ have been investigated via tunable laser ͑700-985 nm͒ resonance Raman spectroscopy. "Steplike" dispersive behavior was observed for these IFMs, along with associated clusters of radial breathing mode ͑RBM͒ overtones at higher frequencies. While the excitation profiles of both RBM and RBM overtones follow a classical behavior predicted by resonance Raman theory, significant differences are observed for the IFM excitation profiles. The observed IFM maxima were found to obey a resonance behavior based on a combination of the E 22 S andE 11 S transition energies, scaled by the inverse diameter of the respective nanotube. Only IFMs for the mod͑n − m ,3͒ = 2 nanotubes are visible, with intensities found to obey the family-based chiral angle dependence similar to previously reported electron-phonon interaction patterns observed for the RBM.

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Section: Resultsmentioning

confidence: 99%

Intermediate-frequency Raman modes for the lower optical transitions of semiconducting single-walled carbon nanotubes

2007

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“…For isolated tubes with d t > 2 nm, Γ G-is similar to semiconducting SWNTs, and the line mostly looks like a normal Lorentzian, reflectin e broad. Values of Γ G-> 70 cm -1 have been observed for isolated metallic SWNTs [ 24] .…”

Section: Introductionmentioning

confidence: 93%

“…The D-line and its second harmonic G*-line are highly dispersive and observed in isolated tubes and bundles. However in bundles superimposed on the linear dependence of ω D and ω G* on laser energy is an oscillatory feature due to resonance of the laser energy with specific van Hove singularities [24] . The D-line intensity is large compared to that of the G-line when the sample has a large number of defects while the G * -line intensities always shows a large intensity comparable to the G-line without defects.…”

Section: Introductionmentioning

confidence: 99%

Use of Raman spectroscopy in the investigation of debundling of single walled carbon nanotubes

Gregan¹,

Keogh²,

Hedderman³

et al. 2005

SPIE Proceedings

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This work is licensed under a Creative Commons AttributionNoncommercial-Share Alike 3.0 License Recommended Citation Gregan, E. et al. (2005) Use of Raman spectroscopy in the investigation of debundling of single walled carbon nanotubes. Proceedings of OptoIreland, 2005. SPIE, vol. 5826, pp.56 ABSTRACTSamples of raw nanotubes are compared to those deposited from solutions to examine separation of nanotube bundles. Single wall nanotubes bundles produced by the arc-discharge and HiPco methods were solubilised in toluene, DMF and 1,2 dichloroethane. Resonant Raman spectroscopy was used to determine if debundling of the tubes sample occurred. The results showed some degree of debundling, best for the 1,2 dichloroethane solvent, which also shows long term solubility.

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“…Historically, the G band has been explored in many different ways to gain a comprehensive insight into both electronic and vibrational behaviors in graphite [9], mono-, bi-, and multilayer graphene [10], stacking order between the layers of graphene [11,12], SWNTs [13], and environment influences on carbon nanotubes, for example, pressure or tension [14][15][16]. The G band frequency of carbon nanotubes is not only dependent on the E laser but also on the nanotube diameter [17][18][19][20][21]. In 2005, Pfeiffer et al [22] studied in detail for the first time such dependencies of the G band of bundled DWNTs.…”

Section: Introductionmentioning

confidence: 99%

G′band in double- and triple-walled carbon nanotubes: A Raman study

et al. 2015

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Double-and triple-walled carbon nanotubes are studied in detail by laser energy-dependent Raman spectroscopy in order to get a deeper understanding about the second-order G band Raman process, general nanotube properties, such as electronic and vibrational properties, and the growth method itself. In this work, the inner nanotubes from the double-and triple-walled carbon nanotubes are produced through the encapsulation of fullerene peapods with high-temperature thermal treatments. We find that the spectral features of the G band, such as the intensity, frequency, linewidth, and line shape are highly sensitive to the annealing temperature variations. We also discuss the triple-peak structure of the G band observed in an individual triple-walled carbon nanotube taken at several laser energies connecting its Raman spectra with that for the G band spectra obtained for bundled triple-walled carbon nanotubes.

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The anomalous dispersion of the disorder-induced and the second-order Raman Bands in Carbon Nanotubes

Cited by 69 publications

References 0 publications

Intermediate-frequency Raman modes for the lower optical transitions of semiconducting single-walled carbon nanotubes

Intermediate-frequency Raman modes for the lower optical transitions of semiconducting single-walled carbon nanotubes

Use of Raman spectroscopy in the investigation of debundling of single walled carbon nanotubes

G′band in double- and triple-walled carbon nanotubes: A Raman study

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