Synthesis of Gallium Nitride and Related Oxides Via Ammonobasic Reactive Sublimation (ARS)

Abstract

Ammonobasic reactive sublimation (ARS) is proposed as a novel method to synthesize GaN and related oxides. Results indicate that GaN growth occurs by a nitriding process of Ga and related oxides, establishing a direct dependence on NH 4 OH amount added as a primary chemical reactive. The samples were grown on p-type Si (111) substrates inside a tube furnace, employing GaN powder and NH 4 OH. The characterizations of the samples were carried out by XRD, SEM, EDS and PL techniques, revealing the influence of NH 4 OH on the improvement of GaN synthesis and the enhancement of its optical and structural properties.

On tuning architectonics of nanoscaled assemblies of Zn-Ga-Al -based oxides obtained from layered double hydroxides precursors

“…After calcination at 925 o C, the XRD analysis clearly show the formation of well-crystallized β-Ga2O3, while the characteristic reflections of ZnGa2O4 is also identified. This result is in agreement with previous reported data from the literature [13][14][15][16][17][18][19][20][21][22]. Therefore, the controlled thermal treatment of Ga/ZnGa gave rise to a complex assembly of the mixed oxides described as ZnO/Ga2O3/ZnGa2O4.…”

Physical nitriding reaction of organic metal with solvent-free gallium nitride (GaN)

“…high-temperature/HPHT solution, [15,16] sodium flux method, etc. [17,18] Compared with these methods, GaN single crystal substrate prepared with high purity GaN polycrystalline powder particles not only has fast growth rate, low environmental pressure requirements, [19,20] but also greatly reduces dislocation density. [10] Therefore, with the expansion of 5G communication and higher frequency products, the future development trend is: in order to meet the demand of a large number of GaN single crystal substrates, large-scale production of high purity and good characteristics of GaN polycrystalline powders is essential.…”