Morphological and electrical evolution of ZnO: Al thin filmsdeposited by RF magnetron sputtering onto glass substrates

Silva, Érica Pereira da; Chaves, Michel; Durrant, Steven F.; Lisboa‐Filho, Paulo Noronha; Bortoleto, J. R. R.

doi:10.1590/1516-1439.281214

Cited by 34 publications

(16 citation statements)

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“…The crystalline structure of the AZO films was studied using X-ray Diffraction (XRD) in θ-2θ mode as well as at a grazing incidence angle of 2º, using a diffractometer (Panalytical X' Pert Powder) with the CuK α radiation at a wavelength of 1.5405 Å. The average crystallite size τ, was estimated using Scherrer's equation (1), where k is the shape factor (usually 0.9), λ is the X-ray wavelength, β is the FWHM and θ is the Bragg diffraction angle of the (002) peak in the θ-2θ mode.…”

Section: Methodsmentioning

confidence: 99%

“…Transparent conductive oxides (TCO) are materials based on metallic oxides capable of conducting electric current without deterioration in their optical transmission 1 , exhibiting a resistivity of roughly 10 -3 to 10 -4 Ωcm and a transmittance of about 80% in the visible region 2 . These films find diverse applications in optoelectronic devices, such as liquid crystal displays, touch-sensitive panels, flat-screen monitors, infrared optical windows and photovoltaic cells [3][4][5] .…”

Section: Introductionmentioning

confidence: 99%

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Al-doping and Properties of AZO Thin Films Grown at Room Temperature: Sputtering Pressure Effect

et al. 2019

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Aluminum zinc oxide (AZO) thin films were synthesized on glass substrates by radio frequency (rf) magnetron sputtering from a metallic Zn-Al (5 at. %) target at room temperature. The morphological, structural, electrical and optical properties of the films were studied as a function of the sputtering pressure, which was varied from 0.1 to 6.7 Pa. X-ray diffraction (XRD) analyses revealed that the films obtained were polycrystalline, having a hexagonal wurtzite structure with a preferential orientation in the (002) plane. In addition, the crystallite size increased as a function of sputtering pressure. Owing to the re-sputtering of the Zn atoms from the growing film, the aluminum concentration presented a maximum value of 13 at. %. At pressures close to 0.16 Pa, we obtained films with values of electrical resistivity and mobility of 2.8 10-3 Ω cm and 17 cm 2 /Vs, respectively. Finally, our results indicate that the structure zone diagram proposed by Thornton and later modified by Kluth does not fully predict the structural/morphological behavior of the AZO films, since plasma interactions must also be taken into account. With the methodology used, transparent conductive electrodes can be deposited on substrates at low temperatures.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Al-doping and Properties of AZO Thin Films Grown at Room Temperature: Sputtering Pressure Effect

et al. 2019

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“…AZO thin films have been prepared by different synthesis methods [14][15][16] , where high quality ZnO films can be produced with a controlled thickness by using DC or RF magnetron sputtering in the semiconductor technology manufacturing 17 .…”

Section: Introductionmentioning

confidence: 99%

Optical and Structural Study of ZnO Thin Films Deposited by RF Magnetron Sputtering at Different Thicknesses: a Comparison with Single Crystal

Jazmati

Abdallah

2018

Mat. Res.

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Optical characterizations of preferred orientation (002) ZnO thin films, prepared by RF magnetron sputtering under pure argon plasma, with different thicknesses have been investigated, where grain size and resistivity increase with thickness. Energy band gap and refractive indices have been calculated. A correlation between band gap values and crystalline quality, which is improved with thickness, has been discussed. The calculated refractive indices of the thicker deposited films have increased as the thickness increases. Full width Half Maxima (FWHM) of band gap Photoluminescence (PL) emission decreases with thickness increasement due to quality improvement as it has been monitored by X-Ray Diffraction (XRD). A comparison between PL spectra of 1200 nm film and ZnO single crystal at low temperature is found to be similar.

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“…5 shows the energy bandgap of the ZnO films estimated by the extrapolation of the linear part of the (ahν) 2 versus hν plots. From the optical absorption spectra it was possible to determine the value of the energy gap (Eg) using Tauc Equation [27];…”

Section: Fig 1 Xrd Patterns Of the Zno Filmsmentioning

confidence: 99%

Synthesis and Characterization of Na Doped ZnO Rods Grown by Simple Chemical Method

Karadeniz

Çiplak²,

Ekinci³

2020

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In this study, the effects of Na doped on the structure, morphology, and optical properties of the ZnO films deposited on glass substrate were investigated. The films were synthesized on glass substrates via a simple chemical method. Undoped and Na-doped ZnO films were obtained from an aqueous solution of the Zinc nitrate hexahydrate (Zn(NO3)2·6H2O), Sodium Nitrate (NaNO3) and hexamethylenetetramine-HMT (C6H12N4). Characterization of the films was examined using a Scanning electron microscope (SEM) and X-ray diffractometer (XRD), Ultraviolet-Visible spectrophotometer (UV-Vis) and X-Ray Photoelectron (XPS). The structure, morphology, and optical properties of the films were presented. The wurtzite ZnO films showed rod arrays morphology. The optical band gap increased with the doping of Na metal. The result shows that Na addition affected the properties of the ZnO films.

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Morphological and electrical evolution of ZnO: Al thin filmsdeposited by RF magnetron sputtering onto glass substrates

Cited by 34 publications

References 23 publications

Al-doping and Properties of AZO Thin Films Grown at Room Temperature: Sputtering Pressure Effect

Al-doping and Properties of AZO Thin Films Grown at Room Temperature: Sputtering Pressure Effect

Optical and Structural Study of ZnO Thin Films Deposited by RF Magnetron Sputtering at Different Thicknesses: a Comparison with Single Crystal

Synthesis and Characterization of Na Doped ZnO Rods Grown by Simple Chemical Method

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