Wafer-Scale Growth and Transfer of Aligned Single-Walled Carbon Nanotubes

Patil, Nishant; Lin, Andy; Myers, Edward R.; Ryu, Koungmin; Badmaev, Alexander; Zhou, Chongwu; Wong, H.-S. Philip; Mitra, Subhasish

doi:10.1109/tnano.2009.2016562

Cited by 181 publications

(87 citation statements)

References 15 publications

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“…• The alignment and positioning of the CNTs during the CNT growth process: CNTs grown on quartz substrates can yield nearly perfectly linear (> 99.9%) aligned arrays of CNTs [13], but there remains a non-negligible fraction of mispositioned CNTs that can interfere with the logic functionality. Nevertheless, CNFET circuits immune to such mispositioned CNTs have been developed [14].…”

Section: Manufacturing Imperfections In Cnfets and Challengesmentioning

confidence: 99%

“…Diameter variations cause fluctuations in the CNFET's threshold voltage and drive current. Typical CNT growth techniques produce CNTs with diameters ranging from 0.5 to 3nm, but the standard deviation of the CNT diameter can often be controlled within 10% of the mean diameter [13].…”

Section: Manufacturing Imperfections In Cnfets and Challengesmentioning

confidence: 99%

“…CNT diameter (D) Normal: µ dia = 1.5nm, σ dia = 0.16nm [13] Pitch (P) Chi 2 : µ picth = 4nm, σ pitch = 0.16nm [15] S/D doping level (Dop) Normal: µ dop = 1%, σ dop = 0.1% [7] m-CNT probability (p m ) Uniform: 0%-33% [7] m-CNT removal prob. (p mR ) Uniform: 99.99%-100% [22], [23] s-CNT prob.…”

Section: Distributionmentioning

confidence: 99%

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Variability and reliability analysis of CNFET technology: Impact of manufacturing imperfections

Almudéver

Rubio

2015

Microelectronics Reliability

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Carbon nanotube field-effect transistors (CNFETs) are promising candidates to substitute silicon transistors. Boasting extraordinary electronic properties, CNFETs exhibit characteristics rivaling those of state-of-the-art Si-based metal-oxide-semiconductor field-effect transistors (MOSFETs). However, as any technology that is in development, CNFET fabrication process still have some imperfections that results in carbon nanotube variations, which can have a severe impact on the devices' performance and jeopardize their reliability (in this work the term reliability means time-zero failure due to manufacturing variations). This paper presents a study of the effects on transistors of the main CNFET manufacturing imperfections, including the presence of metallic carbon nanotubes (m-CNTs), imperfect m-CNT removal processes, chirality drift, CNT doping variations in the source/drain extension regions, and density fluctuations due to non-uniform inter-CNT spacing.

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Section: Manufacturing Imperfections In Cnfets and Challengesmentioning

confidence: 99%

Section: Manufacturing Imperfections In Cnfets and Challengesmentioning

confidence: 99%

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Variability and reliability analysis of CNFET technology: Impact of manufacturing imperfections

Almudéver

Rubio

2015

Microelectronics Reliability

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“…They aligned nanotube arrays with controlled density on crystalline, insulating sapphire substrates, which are similar to industry-adopted silicon-on-insulator substrates. Subsequently, Patil et al [15] grew wafer-scale-aligned carbon nanotube on single-crystal quartz and then transferred the grown carbon nanotube from quartz wafers to silicon wafers. Large-scale fabrication of SWCNT FET had been realized.…”

Section: Introductionmentioning

confidence: 99%

Study on the large-scale assembly and fabrication method for SWCNTs nano device

Tian

et al. 2013

Sci. China Phys. Mech. Astron.

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The large-scale assembly and fabrication method for single-walled carbon nanotube (SWCNT) nano devices was implemented. Assembly of SWCNT field effect transistor (FET) was realized by floating potential dielectrophoresis approach. The simulation of floating potential distribution of the chip was performed by comsol multiphysics coupling software. Six hundred devices were assembled on the area of less than one square centimeter. The fabricated devices were characterized by atomic force microscopy and scanning electron microscopy. The experimental results showed that large-scale assembly had been realized, and the success rate of ideal assembly for SWCNT FET had been assessed.

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“…These progresses mainly include: (a) the development of RF circuit models for single and bundle interconnects consisting of SWCNT, DWCNT and MWCNT [2][3][4][5]; (b) the extraction of their distributed parameters [6][7][8]; (c) the characterization of crosstalk effects [9,10], (d) the prediction of their performance parameters in comparison with copper interconnects used for advanced CMOS fabrication technologies [11][12][13], and (e) the study on their relative stability [14], power handling capability, and other reliability issues [15]. On the other hand, it must be emphasized that design and fabrication technologies of CNT-based interconnects are very important for their real application in the future 3-D ICs, and some significant progresses can be found in [15][16][17][18][19]. Also, some methodologies on transmission line, interconnects and transient signal analysis can be found in [30][31][32].…”

Section: Introductionmentioning

confidence: 99%

Transfer Function and Compact Distributed RLC Models of Carbon Nanotube Bundle Interconnets and Their Applications

Cui¹,

Wang²

2010

PIER

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Abstract-According to the derived transfer function using different orders of approximation, stability and signal transmission analysis of a driven metallic single-walled carbon nanotube (SWCNT) bundle interconnect are performed. It is shown that as the length of SWCNT bundle interconnect increases, the poles will be closer to the imaginary axis, which causes the transmitted signal response tends to be more damping. Using the fourth-order approximation of the transfer function, the transmitted pulse waveform along the SWCNT bundle interconnect is captured accurately, with signal overshoot and time delay examined. Further, a complete physical model for the transient response of carbon nanotube bundle interconnect is derived, which can also accurately predict the transient response of carbon nanotube bundle interconnect including time delay and crosstalk.

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Wafer-Scale Growth and Transfer of Aligned Single-Walled Carbon Nanotubes

Cited by 181 publications

References 15 publications

Variability and reliability analysis of CNFET technology: Impact of manufacturing imperfections

Variability and reliability analysis of CNFET technology: Impact of manufacturing imperfections

Study on the large-scale assembly and fabrication method for SWCNTs nano device

Transfer Function and Compact Distributed RLC Models of Carbon Nanotube Bundle Interconnets and Their Applications

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