2008
DOI: 10.1109/tmag.2008.2003507
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Optimization of 2DEG InAs/GaSb Hall Sensors for Single Particle Detection

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Cited by 58 publications
(11 citation statements)
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“…In the past 3 decades, there has been a growing interest in GaSb as both substrate and active device material, owing to its peculiar structural, electronic, and thermal properties . GaSb-based structures have been proposed for a wide range of applications from high-speed optoelectronics to high-efficiency solar energy conversion , from gas sensing and environmental monitoring to biomedical imaging and health care …”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…In the past 3 decades, there has been a growing interest in GaSb as both substrate and active device material, owing to its peculiar structural, electronic, and thermal properties . GaSb-based structures have been proposed for a wide range of applications from high-speed optoelectronics to high-efficiency solar energy conversion , from gas sensing and environmental monitoring to biomedical imaging and health care …”
Section: Introductionmentioning
confidence: 99%
“…1 GaSbbased structures have been proposed for a wide range of applications from high-speed optoelectronics 2−8 to highefficiency solar energy conversion 9,10 from gas sensing and environmental monitoring 1 to biomedical imaging and health care. 11 Epitaxial structures of reduced dimensionality, such as GaSb/AlGaSb quantum wells, are characterized by optical transitions in the wavelength region of technological importance for optical communication systems. They have found application in infrared optics as lasers, photodetectors, 12,13 and gas sensors, 14 whereas GaSb nanowires, owing to the high hole mobility in GaSb, are being exploited in III−V pchannel metal-oxide semiconductor field effect transistors.…”
Section: ■ Introductionmentioning
confidence: 99%
“…15 Owing to the high carrier mobility, the retrieved a H value of our graphene Hall sensors is very low, which is comparable to that of high quality epitaxial semiconductors as well as suspended or bilayer or multilayer graphenes. [11][12][13]21,22 After both the sensitivity and noise were measured, the resolution of graphene Hall sensors can be obtained. The minimum detectable magnetic field or the magnetic resolution B min is equal to that measured when the Hall voltage V H equals the noise voltage N V .…”
mentioning
confidence: 99%
“…1. This would then result in a minimum detectable flux change at room temperature Φ~10 -9 Φ 0 , better than most of the Hall sensors available 6,7,8,9 . The smallest possible active area is essential when detecting very inhomogeneous fields, such as those produced by single paramagnetic beads, with a field profile at a distance z above the sensor scaling with their diameter 10 .…”
Section: Resultsmentioning
confidence: 99%