2008
DOI: 10.1103/physrevlett.100.206803
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Abstract: Sub-10nm wide graphene nanoribbon field-effect transistors (GNRFETs) are studied systematically. All sub-10nm GNRs afforded semiconducting FETs without exception, with I on /I off ratio up to 10 6 and on-state current density as high as ~2000μA/μm. We estimated carrier mobility ~200cm 2 /Vs and scattering mean free path ~10nm in sub-10nm GNRs. Scattering mechanisms by edges, acoustic phonon and defects are discussed. The sub-10nm GNRFETs are comparable to small diameter (d≤~1.2nm) carbon nanotube FETs with Pd … Show more

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Cited by 1,394 publications
(961 citation statements)
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“…[19][20][21][22][23][24][25][26]28,29,42,[45][46][47][48][49][50][51][52] Interestingly, contradicting results have been reported in the literature, 33 indicating that the ground state of unpassivated zigzag CNTs has a low-spin AFM ordering even for nanotubes that have earlier been considered to present a high-spin ferromagnetically ordered ground state. 32 In light of the considerable progress that has been made in the synthesis and fabrication of ultra-short [60][61][62][63][64] and open ended 65 CNTs and ultra-narrow GNRs, [66][67][68][69] it is desirable to obtain a full understanding of their electronic properties. Such understanding may prove important in future applications of these molecules in nanoelectronic and nanospintronic devices.…”
Section: Introductionmentioning
confidence: 99%
“…[19][20][21][22][23][24][25][26]28,29,42,[45][46][47][48][49][50][51][52] Interestingly, contradicting results have been reported in the literature, 33 indicating that the ground state of unpassivated zigzag CNTs has a low-spin AFM ordering even for nanotubes that have earlier been considered to present a high-spin ferromagnetically ordered ground state. 32 In light of the considerable progress that has been made in the synthesis and fabrication of ultra-short [60][61][62][63][64] and open ended 65 CNTs and ultra-narrow GNRs, [66][67][68][69] it is desirable to obtain a full understanding of their electronic properties. Such understanding may prove important in future applications of these molecules in nanoelectronic and nanospintronic devices.…”
Section: Introductionmentioning
confidence: 99%
“…T he shape/size dependent quantum confinement in graphene nanostructures (GNs) control their electrical [1][2][3] , magnetic and optical properties [4][5][6][7][8][9] . Several studies have indicated that GNs with controlled structure can be incorporated into a wide variety of applications in electronics, optoelectronics and electromagnetics.…”
mentioning
confidence: 99%
“…The edge structure and ribbon width are the two major intrinsic factors determining the electronic and magnetic properties. [2][3][4][5][6] The typical width of GNRs is in the range of 4 to 20 nm. 5,7,8 Recently, Jin et al 9 have obtained GNRs by fabricating nearby holes in monolayer graphene by prolonged electron irradiation [see Fig.…”
mentioning
confidence: 99%