2005
DOI: 10.1103/physrevb.72.045328
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Abstract: We report femtosecond optically excited terahertz ͑THz͒ emission from tellurium doped GaSb at room temperature. The influence of the majority and minority carrier type and concentrations on the strength of the THz emission is investigated. Strong enhancement of THz emission in GaSb is observed as a result of compensation of native acceptors by tellurium donors. Surface field acceleration and the photo-Dember effect are identified as THz emission mechanisms in GaSb and modeled in dependence of the majority and … Show more

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Cited by 64 publications
(45 citation statements)
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“…In materials with43m zincblende crystal symmetry, the tensor contains only a single nonvanishing term d 14 …”
Section: Theorymentioning
confidence: 99%
See 1 more Smart Citation
“…In materials with43m zincblende crystal symmetry, the tensor contains only a single nonvanishing term d 14 …”
Section: Theorymentioning
confidence: 99%
“…Furthermore, the bulk optical rectification depends on the second-order susceptibility coefficient d 14 , and the surface-field-induced signal depends on the surface field F 0 and the third-order susceptibility coefficient γ . The values of these coefficients may be found in Appendix A of HRL.…”
Section: Theorymentioning
confidence: 99%
“…We note that our fluence (∼µJ/cm 2 ) did not reach the quadruple second order nonlinear regime reported in graphite (∼mJ/cm 2 ). 36 To explain our experimental observations, the THz field amplitude due to diffusive and drift motion in the depletion field is simplified by adjusting relevant material parameters: 39 (1)…”
Section: Phase Manipulation Of Terahertz Waves By Work Function Enginmentioning
confidence: 99%
“…На эффективность электрооптического преобразова-ния из оптического в ТГц диапазон частот также влияет количество электронно-дырочных пар [14], которое мож-но увеличивать, например, путем введения примесей в полупроводниковые кристаллы. В настоящей работе рас-сматривается изменение пропускания кристаллической пластины селенида цинка (ZnSe) до легирования и после легирования ионами железа (Fe) с концентрацией на уровне 0.23 масс.%.…”
Section: Introductionunclassified