1993
DOI: 10.1103/physrevb.47.7132
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Optical absorption in semiconductor quantum dots: A tight-binding approach

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Cited by 112 publications
(66 citation statements)
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“…The calculated values are a factor of 5 larger than the experimentally found values. The oscillator strength has also been calculated by Ramaniah and Nair [36] by a tight binding approach and was found to be 4.9 for a radius of 2.07 nm for spherical CdSe quantum dots. However, qualitatively in all cases a weak dependence on emission energy is found that slightly decreases for higher emission energy, in agreement with our results.…”
Section: Discussionmentioning
confidence: 99%
See 1 more Smart Citation
“…The calculated values are a factor of 5 larger than the experimentally found values. The oscillator strength has also been calculated by Ramaniah and Nair [36] by a tight binding approach and was found to be 4.9 for a radius of 2.07 nm for spherical CdSe quantum dots. However, qualitatively in all cases a weak dependence on emission energy is found that slightly decreases for higher emission energy, in agreement with our results.…”
Section: Discussionmentioning
confidence: 99%
“…b) Quantum efficiency for different emission energies. c) Oscillator strength for different emission energies together with a model describing a strongly confined quantum dot (equation 7) and results from tight binding calculations [36].…”
Section: Discussionmentioning
confidence: 99%
“…In ab initio theories, [6][7][8][9][10] one can use minimal coupling ͑with suitable modifications for nonlocal potentials 11 ͒ and calculate directly the necessary matrix elements of the momentum or velocity operator. In the empirical theory, these matrix elements can simply be treated as extra fitting parameters, [12][13][14][15] determined by fitting the dielectric function ͑and thus oscillator strengths͒ to experimental or first-principles spectra. However, even with the full use of symmetry restrictions, the number of additional parameters can be undesirably large; for example, Chang and Aspnes 13 where x is the coordinate of the electron and H is the Hamiltonian.…”
Section: Introductionmentioning
confidence: 99%
“…The fact that the gap shows an overall decrease with increasing cluster size has also been found by other groups. [23,32,33,64,65] The gap size is drawn as a function of 1 -n -1/2 (n being the number of CdS pairs) for unrelaxed clusters in Figure 6. This plot accentuates the size dependence of the gap.…”
Section: Electronic Structurementioning
confidence: 99%