Wafer-scale, epitaxial growth of single layer hexagonal boron nitride on Pt(111)

Abstract

Single-layer hexagonal boron nitride is produced on 2 inch Pt(111)/sapphire wafers. The growth with borazine vapor deposition at process temperatures between 1000 and 1300 K is in situ investigated by photoelectron yield measurements. The growth kinetics is slower at higher temperatures and follows a tanh2 law which better fits for higher temperatures. The crystal-quality of hexagonal boron nitride (h-BN)/Pt(111) is inferred from scanning low energy electron diffraction (x-y LEED). The data indicate a strong dependence of the epitaxy on the growth temperature. The dominant structure is an aligned coincidence lattice with 10 h-BN on 9 Pt(1 × 1) unit cells and follows the substrate twinning at the millimeter scale.

The Winner Takes It All: Carbon Supersedes Hexagonal Boron Nitride with Graphene on Transition Metals at High Temperatures

“…Single layer h-BN on Pt(111) is fabricated with UHV-CVD with borazine as precursor. 12 Figure 1A is a picture of a 2-inch wafer during the fabrication process at high temperature.…”

“…Currently, the best-known method to produce scalable high-quality h-BN is chemical vapor deposition (CVD) in ultra-high vacuum (UHV) environment with precursors containing boron and nitrogen on transition metals. [8][9][10][11][12] High-quality h-BN is achieved by optimization of the preparation parameters, for instance the precursor pressure 13 or the temperature. 12 For Ir(111) an upper temperature limit to prepare boron nitride is reported, and a boron-based borophene layer is formed at growth temperature of 1100 • C. 14 In addition, post-deposition processing can improve the quality, e.g., in terms of mosaicity and strain variations, if the CVD-grown boron nitride layer is back-transferred on a clean and crystalline metal and followed by subsequent annealing.…”

“…[8][9][10][11][12] High-quality h-BN is achieved by optimization of the preparation parameters, for instance the precursor pressure 13 or the temperature. 12 For Ir(111) an upper temperature limit to prepare boron nitride is reported, and a boron-based borophene layer is formed at growth temperature of 1100 • C. 14 In addition, post-deposition processing can improve the quality, e.g., in terms of mosaicity and strain variations, if the CVD-grown boron nitride layer is back-transferred on a clean and crystalline metal and followed by subsequent annealing. 15 While the CVD synthesis of h-BN on transition metals has been well studied, the post-CVD structural changes with high-temperature (HT) annealing or the influence of a post-CVD exposure to contaminations like carbon, on the other hand, have rarely been addressed.…”

“…In the case of h-BN/Cu, in-plane h-BN-graphene structures form when the temperature is above 900 • C, while the stacked graphene/h-BN were observed when the temperature is below 900 • C. 22 In the case of Ir(111), nitrogen completely disappears from the surface. 14 Although previous reports on h-BN fabrication with processes where carbon species have been intentionally added, 17,[19][20][21] the fact that the best quality BN is obtained at growth temperatures near the dissociation of the BN 12 imposes that carbon, if present will be integrated in the structures and thus alter the intrinsic properties of h-BN.…”

“…[ 8–12 ] High‐quality h ‐BN is achieved by optimization of the preparation parameters, for instance the precursor pressure [ 13 ] or the temperature. [ 12 ] For Ir(111) an upper temperature limit to prepare boron nitride is reported, and a boron‐based borophene layer is formed at growth temperature of 1100 °C. [ 14 ] In addition, post‐deposition processing can improve the quality, for example, in terms of mosaicity and strain variations, if the CVD‐grown boron nitride layer is back‐transferred on a clean and crystalline metal and followed by subsequent annealing.…”