1985
DOI: 10.1063/1.96206
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Abstract: A calculation of the critical layer thickness hc for growth of GexSi1−x strained layers on Si substrates is presented for 0≤x≤1.0. The present results are obtained assuming misfit dislocation generation is determined solely by energy balance. This approach differs therefore from previous theories (e.g., Matthews et al.), in which the absence of mechanical equilibrium for grown-in threading dislocations determines the onset of the generation of interfacial misfit dislocations. It is assumed that interfacial mis… Show more

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Cited by 1,646 publications
(337 citation statements)
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“…Another model, developed by People and Bean [169] for semiconductors, considered a nucleation barrier that had to be overcome by the misfit strain in order to favor misfit dislocations generation. Venkatesan et al [71] used this latter model to describe their PbTiO 3 thin films deposited on SrTiO 3 .…”
Section: Critical Thickness For Dislocations Generationmentioning
confidence: 99%
See 1 more Smart Citation
“…Another model, developed by People and Bean [169] for semiconductors, considered a nucleation barrier that had to be overcome by the misfit strain in order to favor misfit dislocations generation. Venkatesan et al [71] used this latter model to describe their PbTiO 3 thin films deposited on SrTiO 3 .…”
Section: Critical Thickness For Dislocations Generationmentioning
confidence: 99%
“…High-resolution transmission electron microscopy and X-ray diffraction revealed the absence of dislocations for all thickness up to 340 nm. The critical thickness derived from People and Bean's model reads [169,170]:…”
Section: Critical Thickness For Dislocations Generationmentioning
confidence: 99%
“…The barrier layer of the nBn was assumed to be pseudomorphic; this is supported by a critical thickness calculation for strained layer growth of 66 nm, using the method of People and Bean. 14 The details of the bandstructure were then calculated, using the strain dependent model of Krijn,15 giving the valence band offset as approximately 28 meV, in a type-II alignment, illustrated in Figure 1(b). Spectral response curves for the nBn detector are shown in Figure 3, indicating a cut-off wavelength of around 4.93 lm at 60 K, which is comparable to binary InSb, effectively covering the MWIR atmospheric transmission window.…”
mentioning
confidence: 99%
“…This mechanism is driven by the relaxation of elastic strain energy and consists of three steps: 2D layer-by-layer growth at the initial stage, misfit dislocation formation at the critical thickness and 3D columnar-like growth at the final stage. [21][22][23] The critical thickness for Ba0.75Sr0.25TiO3 is calculated to be about 2.22 nm using the critical thickness models 24,25 , which is thinner than the thickness of the film (1 μm), thus misfit dislocations will form to accommodate the lattice mismatch between film and substrate 23 . When the film is thicker than 2.22 nm, a columnar growth mode is dominant.…”
Section: Methodsmentioning
confidence: 99%