2010
DOI: 10.1063/1.3373592
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Abstract: The shift in the optical response of a quantum well (QW) embedded in the wall of a rolled-up microtube along the tube axis is examined. The microtube is investigated by x-ray microdiffraction to deduce the strain state of the rolled-up heterostructure. Using these results, the optical response of the QW is calculated. A good agreement of the lattice parameters determined by diffraction and photoluminescence is found, if a double shell tube is assumed for certain parts of the tube. Our results indicate that a r… Show more

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Cited by 24 publications
(42 citation statements)
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“…The nanoscale variation of the strain represents a key property of such bent nanostructures. It leads to considerable band-edge shifts 26 with regions under tensile and compressive strain shifting in opposite directions. Strain is thus widely used and applied in nanosystems and here we put forward that it intrinsically leads to spin-orbit effects.…”
Section: Introductionmentioning
confidence: 99%
“…The nanoscale variation of the strain represents a key property of such bent nanostructures. It leads to considerable band-edge shifts 26 with regions under tensile and compressive strain shifting in opposite directions. Strain is thus widely used and applied in nanosystems and here we put forward that it intrinsically leads to spin-orbit effects.…”
Section: Introductionmentioning
confidence: 99%
“…4 Roll-up nanotechnology has been proven as a convenient approach to fabricate micro/nanotubes, as reported previously. [5][6][7][8][9] By releasing the built-in mechanical stress, the rolling-up process induces the curving of the original flat films, thus resulting in the change of their strain status 10 in the rolled-up geometry 11 (SiGe/Si tubes or III-V tubes), which have been confirmed by micro-Raman scattering, 12 X-ray microdiffractions, 10,13,14 and photoluminescence spectroscopy. 15 Meanwhile, physical properties of semiconductor nanomembranes (NMs), 16,17 such as band structures, 18,19 and carrier mobilities, 20 could be altered by the intrinsic strain/stress.…”
mentioning
confidence: 85%
“…In this later work, Malachias et al [139] proposed a detailed comparison of the strain status in different semiconductor RUNTs (bilayers, multilayers and layers with dislocations), selected to evidence the influence of different layer configuration on lattice relaxation. Combined analysis of PL and XRD data demonstrated that the investigated optically active RUMT shows different strain states on different windings at the same lateral position [140]. More recently, the same microprobe setup was employed to investigate the shift in optical response of an AlGaAs/GaAs quantum well integrated in the wall of RUMT, as a function of the position along the tube axis [140].…”
Section: Local Structure Of Single Semiconductor Rolled-up Nanotubesmentioning
confidence: 99%