2006
DOI: 10.1063/1.2177362
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Abstract: Electrical transport measurements were conducted on semiconducting nanowires and three distinct current-voltage (I-V) characteristics were observed, i.e., almost symmetric, almost rectifying, and almost linear. These I-V characteristics were modeled by treating the transport in the nanowire as in a metal-semiconductor-metal structure involving two Schottky barriers and a resistor in between these barriers, and the transport is shown to be dominated by the reverse-biased Schottky barrier under low bias and by t… Show more

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Cited by 263 publications
(202 citation statements)
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“…It also has been reported that the carrier mobility is sensitive to the electrical contacts between a metal and semiconductor [20]. The M-S-M model [23,24] applied to fit the data in figure 5 shows twofold lower carrier mobility than the annealed case [20]. The lower effective mobile-carrier density and mobility may explain the discrepancy between our work and [26], where the electrical contacts are Ohmic.…”
contrasting
confidence: 54%
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“…It also has been reported that the carrier mobility is sensitive to the electrical contacts between a metal and semiconductor [20]. The M-S-M model [23,24] applied to fit the data in figure 5 shows twofold lower carrier mobility than the annealed case [20]. The lower effective mobile-carrier density and mobility may explain the discrepancy between our work and [26], where the electrical contacts are Ohmic.…”
contrasting
confidence: 54%
“…Facilities support from NSF-MRSEC is acknowledged. CHL thanks Drs Peng and Liu [23,24] for valuable discussions and the use of their Matlab-based PKUMSM software. MGL thanks I Knezevic, D E Savage, and S Scott for enlightening discussions.…”
Section: Acknowledgmentsmentioning
confidence: 99%
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“…2,[8][9][10][11] The deviations in the barrier heights and the ideality factor have been proposed as having been caused by the effects of asymmetric contacts, and the influence of the interfacial layers and/or surface states. [9][10][11][12] In fact, the surfaces of nanostructures should mostly be dominated by surface states because abundant surface states usually exist on the surfaces of these nanostructures. 13 However, to the best of our knowledge, there have been few reports on Schottky contacts on ZnO nanostructures, and no previous report has been found that illustrates the influence of the surface states on the barrier potential and rectifying behavior of ZnO nanostructure Schottky diodes.…”
Section: Introductionmentioning
confidence: 99%