Wafer-scalable, aligned carbon nanotube transistors operating at frequencies of over 100 GHz

Rutherglen, Christopher; Kane, Alexander; Marsh, Philbert F.; Cain, Tyler A.; Hassan, Basem; AlShareef, Mohammed R.; Zhou, Chongwu; Galatsis, K.

doi:10.1038/s41928-019-0326-y

Cited by 63 publications

(78 citation statements)

References 44 publications

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“…High-density aligned SWNTs are necessary for high-performance digital electronics, because they have reduced contact resistance and improved output current, and they can achieve highly linear signal amplification [ 147 ]. Arnold et al reported a dose-controlled, floating evaporative self-assembly (DFES) method for the alignment of SWNTs [ 53 , 54 , 148 ].…”

Section: Applications Of Polymer-sorted Swntsmentioning

confidence: 99%

“…They could achieve a density of ~50 SWNTs μm −1 [ 53 ]. Recently, Zhou et al used the DFES method to deposit high density aligned SWNTs and fabricated radio-frequency (RF) CMOS devices with maximum operation frequencies over 100 GHz [ 147 ]. In order to drive the required current for logic circuits, the density of aligned SWNTs should be 100–200 SWNTs μm −1 (SWNT pitch is between 5–10 nm) [ 22 , 149 ].…”

Section: Applications Of Polymer-sorted Swntsmentioning

confidence: 99%

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Separation of Semiconducting Carbon Nanotubes Using Conjugated Polymer Wrapping

Wang

Lei

2020

Polymers

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In the past two decades, single-walled carbon nanotubes (SWNTs) have been explored for electronic applications because of their high charge carrier mobility, low-temperature solution processability and mechanical flexibility. Semiconducting SWNTs (s-SWNTs) are also considered an alternative to traditional silicon-based semiconductors. However, large-scale, as-produced SWNTs have poor solubility, and they are mixtures of metallic SWNTs (m-SWNTs) and s-SWNTs, which limits their practical applications. Conjugated polymer wrapping is a promising method to disperse and separate s-SWNTs, due to its high selectivity, high separation yield and simplicity of operation. In this review, we summarize the recent progress of the conjugated polymer wrapping method, and discuss possible separation mechanisms for s-SWNTs. We also discuss various parameters that may affect the selectivity and sorting yield. Finally, some electronic applications of polymer-sorted s-SWNTs are introduced. The aim of this review is to provide polymer chemist a basic concept of polymer based SWNT separation, as well as some polymer design strategies, influential factors and potential applications.

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Section: Applications Of Polymer-sorted Swntsmentioning

confidence: 99%

Section: Applications Of Polymer-sorted Swntsmentioning

confidence: 99%

Separation of Semiconducting Carbon Nanotubes Using Conjugated Polymer Wrapping

Wang

Lei

2020

Polymers

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“…[119] CNT FETs on rigid substrates have been extensively explored over the last decade or so with the majority effort centered on competing with Si CMOS for logic applications. [118,[120][121][122] Impressively, CNF FET with a gate length as small as 5 nm [123] and a computer processor made by more than 14 000 CMOS CNT FETs [124] have been demonstrated. Although CNT integrated circuits can be made on plastic substrate [125] and RF FETs have been fabricated on rigid substrate with high performance (f T / f max of 86 GHz/85 GHz, simultaneously), [126] the development of CNT-based flexible microwave transistors significantly lags behind and the RF performance of CNT transistors on plastic substrate remain modest.…”

Section: Flexible Microwave Transistors Based On Emerging Low-dimensimentioning

confidence: 99%

Flexible and Stretchable Microwave Electronics: Past, Present, and Future Perspective

Zhang

Lan

Qiu

et al. 2020

Adv Materials Technologies

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2000759 (6 of 38) www.advmattechnol.de Figure 4. Flexible microwave transistors. a) Schematic illustration of fabrication process flow of flexible microwave TFTs based on Si nanomembrane. Left, two-step transfer-printing of Si nanomembrane on flexible substrate with assist of PDMS stamp. Right, direct flip-printing Si nanomembrane on flexible substrate. Reproduced with permission. [72] Copyright 2010, Wiley-VCH. b) Flexible microwave Si TFT using direct flip-printing approach in (a). Reproduced under the terms of the Creative Commons Attribution 4.0 International License. [75] Copyright 2016, Springer Nature. c) Flexible microwave Si TFT using two-step approach in (a). Reproduced with permission. [72] Copyright 2010, Wiley-VCH. d) Cross-section SEM image of flexible Si MOSFET made by thinning a 65 nm node SOI wafer. Reproduced with permission. [45] Copyright 2013, American Institute of Physics. e) Optical images of flexible GaAs HBT on cellulose nanofibril (CNF) substrate. Reproduced under the terms of the Creative Commons Attribution 4.0 International License. [90] Copyright 2015, Springer Nature. f) Schematic illustration and normalized on-state conductance (G/G 0), maximum transconductance (g m /g m0) of flexible InAs MOSFET with self-aligned gate. Reproduced with permission. [53] Copyright 2012, American Chemical Society. g) Cross-section schematic illustration and gain curves of flexible InGaAs/InAlAs HEMT as function of frequency under various bending conditions. Reproduced with permission. [91] Copyright 2013, American Institute of Physics. h) Output power density (P OUT), power gain (G P) and power-added efficiency (PAE) of the flexible GaN HEMT on thermal conductive tape with thermal conductivity of 1.6 W m −1 K −1. Reproduced with permission. [92] Copyright 2017, Wiley-VCH. i) Photography of AlGaN/GaN film grown on BN coated sapphire substrate and printed on flexible tape. Reproduced with permission. [19] Copyright 2017, Wiley-VCH. j) Cross-section schematic illustration of bottom gate flexible graphene FET (GFET). Reproduced with permission. [93] Copyright 2013, American Chemical Society. k) Cross-section schematic illustration of top gate flexible GFET with self-aligned gate configuration. Reproduced with permission. [94] Copyright 2014, American Chemical Society. l) High-frequency characteristics of flexible GFET with gate length of 50 nm. Reproduced with permission. [95] Copyright 2018, Wiley-VCH. m) Schematic illustration and gain curves of flexible microwave transistor based on MoS 2 as function of frequency. Reproduced with permission. [96] Copyright 2014, Springer Nature. n) High-frequency characteristics of flexible microwave transistor based on black phosphorus (BP) as function of frequency. Reproduced with permission.

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“…Y Dem represents the deembedded Y -parameters. The three-step parasitic de-embedding method has been considered suitable to be applied to CNTFET characterization due to the high operation frequency expected in this technology [7][8][9][10][11] where an appropriate deembedding method can improve accuracy of the device experimental data [24,26]. Notice that the extracted extrinsic parameters do not consider the contribution of the contact resistances at the source and drain sides since these resistances are produced on the interface between CNTs and contact metallizations.…”

Section: Extraction Of the Extrinsic Parametersmentioning

confidence: 99%

Small-signal parameters extraction and noise analysis of CNTFETs

Ramos-Silva

Pacheco‐Sanchez

Enciso-Aguilar³

et al. 2020

Semicond. Sci. Technol.

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The use of carbon nanotube (CNT) field-effect transistors (FETs) in microwave circuit design requires an appropriate, immediate and efficient description of their performance. This work describes a technique to extract the parameters of an electrical equivalent circuit for CNTFETs. The equivalent circuit is used to model the dynamic and noise performance at low-and highfrequency of different CNTFET technologies, considering extrinsic and intrinsic device parameters as well as the contact resistance. The estimation of the contact resistance at the metal/CNTs interfaces is obtained from a Y-function based extraction method. The noise model includes four noise sources: thermal noise, thermal channel noise, shot channel noise and flicker noise. The proposed model is compared with a compact model calibrated to hysteresis-free experimental data from a high-frequency multi-tube (MT)-CNTFET technology. Additionally, it has been applied to experimental data from another fabricated MT-CNTFET technology. The comparison in both cases shows a good agreement between reference data (simulation and experimental) and results from the proposed model. Low-and high-frequency noise projections of the fabricated reference device are further studied. Noise results from both studied technologies show that shot noise mainly contributes to the total noise due to the presence of Schottky barriers at contacts and along the channel.

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Wafer-scalable, aligned carbon nanotube transistors operating at frequencies of over 100 GHz

Cited by 63 publications

References 44 publications

Separation of Semiconducting Carbon Nanotubes Using Conjugated Polymer Wrapping

Separation of Semiconducting Carbon Nanotubes Using Conjugated Polymer Wrapping

Flexible and Stretchable Microwave Electronics: Past, Present, and Future Perspective

Small-signal parameters extraction and noise analysis of CNTFETs

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