Organic Light-Emitting Diodes on Solution-Processed Graphene Transparent Electrodes

Wu, Jingshi; Agrawal, Mukul; Becerril, Héctor A.; Bao, Zhenan; Liu, Zunfeng; Chen, Yongsheng; Peumans, Peter

doi:10.1021/nn900728d

Cited by 916 publications

(621 citation statements)

References 50 publications

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“…90 decreased R s from 40GΩ/ to 4M Ω/ following reduction with dimethylhydrazine. Graphitization 79 , hydrazine exposure and low-temperature annealing 54 , or high-temperature vacuum annealing 91 further decreased R s , down to 800Ω/ for T=82% 91 .…”

Section: Photonics and Optoelectronics Applications A Transparenmentioning

confidence: 96%

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Graphene photonics and optoelectronics

et al. 2010

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The richness of optical and electronic properties of graphene attracts enormous interest. Graphene has high mobility and optical transparency, in addition to flexibility, robustness and environmental stability. So far, the main focus has been on fundamental physics and electronic devices. However, we believe its true potential to be in photonics and optoelectronics, where the combination of its unique optical and electronic properties can be fully exploited, even in the absence of a bandgap, and the linear dispersion of the Dirac electrons enables ultra-wide-band tunability. The rise of graphene in photonics and optoelectronics is shown by several recent results, ranging from solar cells and light emitting devices, to touch screens, photodetectors and ultrafast lasers. Here we review the state of the art in this emerging field.

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Section: Photonics and Optoelectronics Applications A Transparenmentioning

confidence: 96%

“…3d, eliminating at the same time the issues related to In diffusion. GTCFs anodes enabled out-coupling efficiency comparable to ITO 91 . Considering that R s and T were 800Ω/ and 82% at 550nm 91 , it is reasonable to expect further optimization will improve performance.…”

Section: Light-emitting Devicesmentioning

confidence: 99%

Graphene photonics and optoelectronics

et al. 2010

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“…[8,[30][31][32] The use of 2D materials can be considered as a third approach, with graphene as the most prominent material. [33][34][35] The latter material offers in theory inplane (ballistic) conductance, while being quite transparent due to their limited thickness. Also available are hybrid approaches that combine the properties of several material systems into a single functional electrode, [36][37][38][39] such as embedded metal nanowire networks in a dielectric matrix.…”

Section: Materials Systems For Transparent Electrodesmentioning

confidence: 99%

Transparent Electrodes for Efficient Optoelectronics

Morales‐Masis

Wolf

Woods‐Robinson

et al. 2017

Adv Elect Materials

319

275

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With the development of new generations of optoelectronic devices that combine high performance and novel functionalities (e.g., flexibility/bendability, adaptability, semi or full transparency), several classes of transparent electrodes have been developed in recent years. These range from optimized transparent conductive oxides (TCOs), which are historically the most commonly used transparent electrodes, to new electrodes made from nano‐ and 2D materials (e.g., metal nanowire networks and graphene), and to hybrid electrodes that integrate TCOs or dielectrics with nanowires, metal grids, or ultrathin metal films. Here, the most relevant transparent electrodes developed to date are introduced, their fundamental properties are described, and their materials are classified according to specific application requirements in high efficiency solar cells and flexible organic light‐emitting diodes (OLEDs). This information serves as a guideline for selecting and developing appropriate transparent electrodes according to intended application requirements and functionality.

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“…It exhibits many unusual physical properties, e.g., a rich magnetic quantization [1][2][3][4][5][6][7][8], half-integer Hall effect [9][10][11][12][13][14][15][16], high Young's modulus [17][18][19][20][21], high Fermi velocity (10 6 m/s), and others. Graphene could play an important role in technological applications such as electric circuits [22,23], field-effect transistors [24,25], light-emitting diodes [26][27][28], solar cells [29][30][31][32], and durable touch screens [33,34]. Due to the hexagonal symmetry with a rotational angle of 60 • , a non-doped graphene is a zero-gap semiconductor with a vanishing density of state at the Fermi level.…”

Section: Introductionmentioning

confidence: 99%

Configuration-enriched magneto-electronic spectra of AAB-stacked trilayer graphene

Lin

et al. 2015

Carbon

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We developed the generalized tight-binding model to study the magneto-electronic properties of AAB-stacked trilayer graphene. Three groups of Landau levels (LLs) are characterized by the dominating subenvelope function on distinct sublattices. Each LL group could be further divided into two sub-groups in which the wavefunctions are, respectively, localized at 2/6 (5/6) and 4/6 (1/6) of the total length of the enlarged unit cell. The unoccupied conduction and the occupied valence LLs in each subgroup behave similarly. For the first group, there exist certain important differences between the two sub-groups, including the LL energy spacings, quantum numbers, spatial distributions of the LL wavefunctions, and the field-dependent energy spectra.The LL crossings and anticrossings occur frequently in each sub-group during the variation of field strengths, which thus leads to the very complex energy spectra and the seriously distorted wavefunctions. Also, the density of states (DOS) exhibits rich symmetric peak structures. The predicted results could be directly examined by experimental measurements. The magnetic quantization is quite different among the AAB-, AAA-, ABA-, and ABC-stacked configurations.

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Organic Light-Emitting Diodes on Solution-Processed Graphene Transparent Electrodes

Cited by 916 publications

References 50 publications

Graphene photonics and optoelectronics

Graphene photonics and optoelectronics

Transparent Electrodes for Efficient Optoelectronics

Configuration-enriched magneto-electronic spectra of AAB-stacked trilayer graphene

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