“…For example, SWCNT FETs with a subthreshold swing close to the room-temperature limit of 60 mV/decade, [1][2][3] transconductance as large as 30 µS, [4][5][6] and an on/off ratio of 10 7 [refs 1 and 7], have been demonstrated. By utilizing large-capacitance gate dielectrics, SWCNT FETs can be operated with a gate-source voltage of 1 V. 2,3,5,6,[8][9][10] Like silicon FETs, SWCNT transistors with individually addressable (i.e., patterned) gate electrodes can be connected into logic circuits. [11][12][13][14][15] However, realizing transistors based on individual carbon nanotubes that display large transconductance, steep subthreshold swing and large on/off ratio simultaneously (i.e., in the same device) remains a significant challenge.…”