2004
DOI: 10.1021/nl049222b
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Abstract: Carbon nanotube field-effect transistors with structures and properties near the scaling limit with short (down to 50 nm) channels, self aligned geometries, palladium electrodes with low contact resistance and high-κ dielectric gate insulators are realized. Electrical transport in these miniature transistors is near ballistic up to high biases at both room and low temperatures. Atomic layer deposited (ALD) high-κ films interact with nanotube sidewalls via van der Waals interactions without causing weak localiz… Show more

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Cited by 501 publications
(398 citation statements)
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References 26 publications
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“…For example, SWCNT FETs with a subthreshold swing close to the room-temperature limit of 60 mV/decade, [1][2][3] transconductance as large as 30 µS, [4][5][6] and an on/off ratio of 10 7 [refs 1 and 7], have been demonstrated. By utilizing large-capacitance gate dielectrics, SWCNT FETs can be operated with a gate-source voltage of 1 V. 2,3,5,6,[8][9][10] Like silicon FETs, SWCNT transistors with individually addressable (i.e., patterned) gate electrodes can be connected into logic circuits. [11][12][13][14][15] However, realizing transistors based on individual carbon nanotubes that display large transconductance, steep subthreshold swing and large on/off ratio simultaneously (i.e., in the same device) remains a significant challenge.…”
mentioning
confidence: 99%
“…For example, SWCNT FETs with a subthreshold swing close to the room-temperature limit of 60 mV/decade, [1][2][3] transconductance as large as 30 µS, [4][5][6] and an on/off ratio of 10 7 [refs 1 and 7], have been demonstrated. By utilizing large-capacitance gate dielectrics, SWCNT FETs can be operated with a gate-source voltage of 1 V. 2,3,5,6,[8][9][10] Like silicon FETs, SWCNT transistors with individually addressable (i.e., patterned) gate electrodes can be connected into logic circuits. [11][12][13][14][15] However, realizing transistors based on individual carbon nanotubes that display large transconductance, steep subthreshold swing and large on/off ratio simultaneously (i.e., in the same device) remains a significant challenge.…”
mentioning
confidence: 99%
“…Device r cn (nm) r sd (nm) t ins (nm) l gap (nm) κ ins Chirality E g (eV) Φ B (eV) 1 [10] 0 significant error that arises from non-physical boundaries near needle contacts. In the case of the aspect ratio of the gate and source/drain contact gap to the dielectric thickness, comparing devices 3 and 4, we note that by reducing l gap or increasing t ins , the electric field between the gate and the source/drain contact is oriented in a more radial direction, reducing the component normal to boundary.…”
Section: Resultsmentioning
confidence: 99%
“…[9], in which only the equilibrium case was considered. We continue to evaluate a coaxial structure as a benchmark device in terms of scale and performance, although the device dimensions are based on a state-of-the-art planar device [10], with short CN length, high-permittivity gate dielectric, and thin source/drain contacts. We consider the effect of several geometry modifications on the accuracy of the results, including reductions to the radius of the source/drain contacts, changes to the gate dielectric thickness and material, and changes to the spacing between the source/drain electrodes and the edge of the gate electrode.…”
Section: Introductionmentioning
confidence: 99%
“…9,13,[30][31][32] Furthermore, owing to their 1-D nature, better electrostatics can be attained by coaxial gating of nanotubes, thereby minimizing the various short-channel effects that are often encountered in nanoscale, planar devices. 30 Ballistic nanotube transistors, free of any carrier scattering, have already been shown to be capable of delivering ϳ30ϫ higher ON current density (ON current is proportional to switching speed) as compared to stateof-the-art Si devices, therefore demonstrating the potential of using chemically synthesized molecular-scale structures for high-performance and low-power electronics ( Figure 3). 30 While the potential of nanotube electronics has been demonstrated, challenges in the assembly and purification of nanotubes need to be addressed to enable their integration for large-scale manufacturing.…”
Section: Nano Focusmentioning
confidence: 99%
“…[8][9][10][11][12][13][14][15][27][28][29][30][31][32][33][34][35][36][37][38][39][40][41][42][43] Particularly, nanotube electronics have been the focus of a wide range of academic and industrial research efforts. [9][10][11]13,[27][28][29][30][31][32][33] The high electron and hole mobility ( Ϸ 10000 cm 2 /V · s) of nanotubes, their …”
mentioning
confidence: 99%