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Cited by 64 publications
(70 citation statements)
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“…Interfacial charge transfer can occur when a molecular electron donor or acceptor of the appropriate energy comes in contact with an excited silicon nanocrystallite in the porous Si matrix. [12,20] Likewise, interfacial energy transfer can occur if the molecular quencher has accessible singlet or triplet energy levels. [8, 21±23] Nonradiative surface traps can be introduced by a chemical reaction at the porous Si surface that generates mid-gap defects.…”
Section: Mechanism Of Reversible Quenching Of Photoluminescencementioning
confidence: 99%
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“…Interfacial charge transfer can occur when a molecular electron donor or acceptor of the appropriate energy comes in contact with an excited silicon nanocrystallite in the porous Si matrix. [12,20] Likewise, interfacial energy transfer can occur if the molecular quencher has accessible singlet or triplet energy levels. [8, 21±23] Nonradiative surface traps can be introduced by a chemical reaction at the porous Si surface that generates mid-gap defects.…”
Section: Mechanism Of Reversible Quenching Of Photoluminescencementioning
confidence: 99%
“…[12] Therefore, electron transfer is expected to be exergonic (negative free energy) for the nitroaromatic molecules DNT and TNT, based on their similar reduction potentials (À 0.9 and À 0.7 vs NHE, respectively). [4] We have also observed that nitrobenzene is an effective quenching agent.…”
Section: Mechanism Of Reversible Quenching Of Photoluminescencementioning
confidence: 99%
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“…Upon exposure to nitroaromatics, a dynamic electron transfer between the conduction band of the Si NP to the vacant antibonding molecular orbital (π * ) of the nitroaromatic molecule occurs, resulting in the PL quenching of the Si NPs. 4,5,8,20 This is often referred to as a non-radiative recombination, or Shockley-Read-Hall (SRH) recombination, where an electron falls into a trap caused by lattice distortions or another molecule.…”
mentioning
confidence: 99%