2020
DOI: 10.1007/s41127-019-00029-6
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Graphene prepared by chemical vapour deposition process

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Cited by 22 publications
(13 citation statements)
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“…The graphene films showed a large resistivity measured by the Van der Pauw method. The graphene material transferred to a dielectric substrate (SiO 2 ) displayed a well-resolved band structure, which evidenced that the obtained material was undoped [82]. A study by Dong et al focuses on the in situ growth of patterned graphene structures via a vertical cold wall CVD reactor using a SiO 2 /Si substrate and Ni-Cu alloy sacrificial layer as a metal catalyst at 800 • C. The Ni-Cu alloy is particularly suitable to be used as a growth substrate for graphene at low temperatures due to its catalytic nature, low carbon solubility (about 4.3 times lower than that of pure Ni), and more uniform grain size compared with Cu and Ni.…”
Section: Cold-wall Cvdmentioning
confidence: 96%
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“…The graphene films showed a large resistivity measured by the Van der Pauw method. The graphene material transferred to a dielectric substrate (SiO 2 ) displayed a well-resolved band structure, which evidenced that the obtained material was undoped [82]. A study by Dong et al focuses on the in situ growth of patterned graphene structures via a vertical cold wall CVD reactor using a SiO 2 /Si substrate and Ni-Cu alloy sacrificial layer as a metal catalyst at 800 • C. The Ni-Cu alloy is particularly suitable to be used as a growth substrate for graphene at low temperatures due to its catalytic nature, low carbon solubility (about 4.3 times lower than that of pure Ni), and more uniform grain size compared with Cu and Ni.…”
Section: Cold-wall Cvdmentioning
confidence: 96%
“…There are several available options for heating the substrate, including passing a current through the substrate itself, induction heating, and using a heater adjacent to the substrate. The cold wall CVD method has some critical advantages over the hot wall approach, namely a less sophisticated design of the reactor, a relatively short deposition time of only a few minutes, a rapid sample heating time, and a rapid sample cooling time [ 24 , 81 , 82 ]. Faster heating and cooling are beneficial for achieving fast growth of graphene, which means significantly reduced costs associated with maintaining process conditions (pressure, temperature and hydrogen flow) [ 83 ].…”
Section: Chemical Vapour Depositionmentioning
confidence: 99%
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“…79,80 In comparison with CVD, which has the potential to yield graphene sheets with high-quality and large surface area, mechanical exfoliation and epitaxial growth also produce goodquality graphene, but they are not compatible with largescale synthesis. 81,82 Nonetheless, CVD requires complicated and expensive vacuum equipment, as well as complex experimental procedures, which limit its choice. 83 Hence, electrochemical exfoliation was proposed for the large-scale synthesis of high-quality graphene from a graphitic electrode in an electrolyte solution.…”
Section: Introductionmentioning
confidence: 99%
“…Recently, the floating catalyst CVD approach, employing a combination of an imidazolium‐based ionic liquid and cellulose‐containing biomass as novel carbon precursors, in the presence of a catalyst, such as ferrocene, has been employed to prepare nanostructured carbon materials, including graphene 79,80 . In comparison with CVD, which has the potential to yield graphene sheets with high‐quality and large surface area, mechanical exfoliation and epitaxial growth also produce good‐quality graphene, but they are not compatible with large‐scale synthesis 81,82 . Nonetheless, CVD requires complicated and expensive vacuum equipment, as well as complex experimental procedures, which limit its choice 83 .…”
Section: Introductionmentioning
confidence: 99%