Enhancement of Electrical and Dielectric Properties of Graphene Oxide‐nanoparticle Based Devices

Ashery, A.; Moussa, M. A.; Turky, Gamal

doi:10.1007/s12633-021-00943-6

Cited by 14 publications

(15 citation statements)

References 64 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The shunt resistance can be calculated from the Y-axis closed to zero voltage. From the Cheung method, [15][16][17][18][19][20][21][22] Eqs. 5-7 defined how the series resistance and ideality factor can be determined from the slope and intercept of the linear part of dv/ dlnI with I(A).…”

Section: Resultsmentioning

confidence: 99%

Carbon Nanotubes/N-Si Heterojunction with High Dielectric Constant and Rectification Ratio, Low Dielectric Loss Tangent

Ashery¹,

Gad²,

Turky³

et al. 2022

ECS J. Solid State Sci. Technol.

Self Cite

View full text Add to dashboard Cite

The structure of carbon nanotubes behaves as a p-type semiconductor deposited on the n-silicon wafer formed P-N junction was investigated. This structure of Au/CNTs/n-Si/Al has novel electric and dielectric properties such as high rectification ratio, low dielectric loss tangent, and high dielectric loss (ɛ'), which increases with declines frequency reaches to 4x104 in the positive direction of dielectric constant at a frequency equals 100 Hz and reaches to -1x106 in the negative region of dielectric constant at frequency 10 Hz. The dielectric loss tangent (tanδ) has low values which are raised with a decline in frequencies, causing their values to fluctuate from 0.15 to 0. 20. The ɛ' and tanδ have negative values at high and low frequencies, though the ɛ' has positive values at mid frequencies. The electrical properties of this device were investigated by studying I-V, Cheung, dv/dlnI, and Norde characterization. The parameters such as rectification ratio (RR), the resistance of junction (Rj), barrier height (ɸb), and ideality factor were calculated.

show abstract

Section: Resultsmentioning

confidence: 99%

Carbon Nanotubes/N-Si Heterojunction with High Dielectric Constant and Rectification Ratio, Low Dielectric Loss Tangent

Ashery¹,

Gad²,

Turky³

et al. 2022

ECS J. Solid State Sci. Technol.

Self Cite

View full text Add to dashboard Cite

show abstract

“…Thereby, a doping of MFPR with metallic, nonmetallic, and photosensitive molecules like GO could induce semiconductor activities in the resultant product. [52][53][54] The GO as a most sensitive photocatalyst on doping with MFPR induce photoactivity to reduce the fluorescent dyes like methylene blue (MB) to leuco MB (LMB). The GO is a highly stable nanomaterial and develops positive h þ À Á…”

Section: Resultsmentioning

confidence: 99%

Synthesis, characterization, and functionalization of superadhesive melamine formaldehyde polyvinylpyrrolidone resins doped with metallic and graphene oxide nanoparticles for better industrial applications

Pan

Upadhyay

Singh

et al. 2022

J of Applied Polymer Sci

View full text Add to dashboard Cite

Structure of melamine‐formaldehyde‐polyvinylpyrrolidone (MFP) polymer resin prepared with melamine, formaldehyde, polyvinyl pyrrolidone (PVP) at pH=7 was determined using FTIR, 1H NMR, and 13C NMR spectroscopy. Physicochemical properties and thermal stability were analyzed with dynamic light scattering (DLS) and thermogravimetric analysis (TGA) respectively. 1H NMR spectra showed doublet at 3.13 and 3.17 ppm due to neighboring electron‐deficient nitrogen and electron density of bridged carbon atoms. The 13C NMR have infrared vinyl chain, melamine, and pyrrolidone peak for C=O, 48.72 ppm depicts C atom of −CH2 between O and C atoms. Peak at 17.50 ppm inferred terminal −CH3 of vinyl chain. FTIR stretching frequencies at 3426.38 and 2915.5 cm−1 vibrations depicted −N= (tertiary amine), and −CH2 group of −()CH2−CH2n vinyl chain of PVP, respectively. New band at 2350 cm−1 inferred –CH2 of formaldehyde attached with O atoms of PVP. MFP was doped with Fe3O4 (magnetic nanoparticles = MNPs), CaS (calcium sulfide), CaO, and graphene nanoparticles for reinforcement. Encapsulated Fe3O4–MFPR, CaS–MFPR, graphene oxide–MFPR are compared with MFPR alone. TGA inferred higher stability of Fe3O4–MFPR, CaS–MFPR.

show abstract

“…Such performance of ε′ and tanδ can by the detail that the interfacial dipoles have little period to orientate themselves in the way of the irregular electric field as frequency is high. [30][31][32][33][34][35][36] Plots 4a-4a′, 4e-4e′ disclosed temperature dependency of ε′ at dissimilar frequencies and voltages of Au/PPy-MWCNTs/TiO 2 / Al 2 O 3 /p-Si/Al. As displayed in all Plot 4.…”

Section: Resultsmentioning

confidence: 99%

“…The semicircles merged at low frequencies, corresponding to grains. 25,26,28,[44][45][46][47] Plots 7a-7e displayed Col-Col diagram of ε ′ vs ε ″ at dissimilar temperatures and voltages of Au/PPy-MWCNTs/TiO 2 /Al 2 O 3 / p-Si/Al. as exposed in Plot 7e at voltage v = 2 v, the semicircles and the area under semicircles increase with decreasing temperatures.…”

Section: Resultsmentioning

confidence: 99%

Tuned High Dielectric Constant, Low Dielectric Loss Tangent of Novel Structure Au/PPy-MWCNTs/TiO₂/Al₂O₃/p-Si/Al

Ashery¹

2022

ECS J. Solid State Sci. Technol.

Self Cite

View full text Add to dashboard Cite

We present here a novel construction of Au/PPy-MWCNTs/TiO2/Al2O3/p-Si/Al which was not given in a lecture earlier. We synthesized this construction for request in manufactured electronic devices, sensors, supercapacitors, diodes, and high-energy storage devices and successfully tuned the dielectric constant ɛ' and dielectric loss tangent tan δ by variable frequency, temperature, and voltage. At high frequency (2×107 Hz), the dielectric constant ɛ' and dielectric loss tangent tan δ have positive and negative values from (250 to – 3500) and (-2 to 8), respectively; however at all frequencies (107, 106, 105) Hz, the ɛ' has high positive values (1000, 3500, 10000), but tan δ has low values (2.6, 1.8, 4.5). At frequencies of 103 and 102 Hz, the ɛ' and tanδ have positive and negative values, while at a frequency of 10 Hz, the ɛ' and tan δ have negative values only. The values of ɛ' with lnf at all voltages and temperatures have negative values at high and low frequencies. In mid frequencies, the ɛ' have positive values. Also, the Col-Col diagram and the current conduction mechanism of this construction Au/PPy-MWCNTs/TiO2/Al2O3/p-Si/Al were studied.

show abstract

Enhancement of Electrical and Dielectric Properties of Graphene Oxide‐nanoparticle Based Devices

Cited by 14 publications

References 64 publications

Carbon Nanotubes/N-Si Heterojunction with High Dielectric Constant and Rectification Ratio, Low Dielectric Loss Tangent

Carbon Nanotubes/N-Si Heterojunction with High Dielectric Constant and Rectification Ratio, Low Dielectric Loss Tangent

Synthesis, characterization, and functionalization of superadhesive melamine formaldehyde polyvinylpyrrolidone resins doped with metallic and graphene oxide nanoparticles for better industrial applications

Tuned High Dielectric Constant, Low Dielectric Loss Tangent of Novel Structure Au/PPy-MWCNTs/TiO₂/Al₂O₃/p-Si/Al

Contact Info

Product

Resources

About

Enhancement of Electrical and Dielectric Properties of Graphene Oxide‐nanoparticle Based Devices

Cited by 14 publications

References 64 publications

Carbon Nanotubes/N-Si Heterojunction with High Dielectric Constant and Rectification Ratio, Low Dielectric Loss Tangent

Carbon Nanotubes/N-Si Heterojunction with High Dielectric Constant and Rectification Ratio, Low Dielectric Loss Tangent

Synthesis, characterization, and functionalization of superadhesive melamine formaldehyde polyvinylpyrrolidone resins doped with metallic and graphene oxide nanoparticles for better industrial applications

Tuned High Dielectric Constant, Low Dielectric Loss Tangent of Novel Structure Au/PPy-MWCNTs/TiO2/Al2O3/p-Si/Al

Contact Info

Product

Resources

About

Tuned High Dielectric Constant, Low Dielectric Loss Tangent of Novel Structure Au/PPy-MWCNTs/TiO₂/Al₂O₃/p-Si/Al