Silicon Chemistry II
DOI: 10.1007/bfb0111403
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Cited by 49 publications
(7 citation statements)
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“…The SIC12 intermediate is likely to take part in the deposition process and is included in the analysis. Polymerization of the chlorosilanes is unlikely since Si-Si linkages are unstable at high temperatures (22). This is further supported by the general observation of stoichiometric film growth in the SiHsC12-NHa system (6, I0), implying that silicon in the resulting nitride film is fully coordinated with nitrogen.…”
Section: Chemistry In the Sih2ci2-nh3 Systemmentioning
confidence: 69%
“…The SIC12 intermediate is likely to take part in the deposition process and is included in the analysis. Polymerization of the chlorosilanes is unlikely since Si-Si linkages are unstable at high temperatures (22). This is further supported by the general observation of stoichiometric film growth in the SiHsC12-NHa system (6, I0), implying that silicon in the resulting nitride film is fully coordinated with nitrogen.…”
Section: Chemistry In the Sih2ci2-nh3 Systemmentioning
confidence: 69%
“…It was found that the hydrogen-terminated silicon surface was not stable when incubated with such unprotected ω-unsaturated aminoalkanes, as manifested by visible corrosion of the surface. This corrosion presumably reflects the well-known instability of elemental silicon to alkaline conditions (50,51). In order to address this problem amino-protected derivatives were prepared and coupled to the surface.…”
Section: Resultsmentioning
confidence: 99%
“…The Si-Si bond strength has been measured at various values ranging from 2-3 eV (31). Therefore, it is possible that during write/erase cycling, hot electrons (or holes) could cleave Si-Si bonds near the interface.…”
Section: Implications For Device Performance and Processingmentioning
confidence: 99%
“…There would be a substantial reduction in the number of Si dangling bonds remaining to be ionized by electron impact. Since the bond energies of Si-H and Si-Si are comparable (31), the cleavage of Si-Si bonds by Hs is probably assisted by lattice strain. Thus, the hydrogen annealing process may also be interpreted as a strain relief mechanism, it is found that hydrogen annealing mitigates the endurance problem, but does not eliminate it.…”
Section: Implications For Device Performance and Processingmentioning
confidence: 99%