Semiconductors: Data Handbook

Madelung, O.

doi:10.1007/978-3-642-18865-7

Cited by 1,660 publications

(1,529 citation statements)

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“…This severely limits the largest non-trivial gap obtainable for I-III-VI 2 compounds. Through the direct calculation, we find that most of the already-synthesized I-III-VI 2 have positive E s−p g and are normal semiconductors [16], except CuTlSe 2 , CuTlTe 2 , AgTlSe 2 and AgTlTe 2 . But the non-trivial gaps of these four TIs are all small due to the positive ∆ CF for CuTlSe 2 and CuTlTe 2 , and small E s−p g for AgTlSe 2 and AgTlTe 2 .…”

Section: Factors Determining the Non-trivial Band Gapmentioning

confidence: 94%

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Band structure engineering of multinary chalcogenide topological insulators

et al. 2011

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Topological insulators (TIs) have been found in strained binary HgTe and ternary I-III-VI 2 chalcopyrite compounds such as CuTlSe 2 which have inverted band structures. However, the nontrivial band gaps of these existing binary and ternary TIs are limited to small values, usually around 10 meV or less. In this work, we reveal that a large non-trivial band gap requires the material having a large negative crystal field splitting ∆ CF at top of the valence band and a moderately large negative s − p band gap E s−p g . These parameters can be better tuned through chemical ordering in multinary compounds. Based on this understanding, we show that a series of quaternary I 2 -II-IV-

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Section: Factors Determining the Non-trivial Band Gapmentioning

confidence: 94%

“…This is an important observation because the chalcopyrite structure is derived from the zinc-blende structure, and the band structure properties are well understood, mostly for solar cell applications [16,17]. Some of the proposed Cu and Ag based TIs, such as CuTlSe 2 and AgTlTe 2 , have already been synthesized experimentally [16,18].…”

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confidence: 99%

Band structure engineering of multinary chalcogenide topological insulators

et al. 2011

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“…(9a) from Ref. 13 and the material parameters 24,25 for AlAs on GaAs at 590 C, this was calculated to give h c $ 50 lm. In the Matthews and Blakeslee model, 8 the mechanical forces along a threading dislocation are equated to give a much lower critical thickness above which existing defects are propagated through a multilayer structure.…”

mentioning

confidence: 99%

Design and characterization of high optical quality InGaAs/GaAs/AlGaAs-based polariton microcavities

Tinkler

Walker

Clarke

et al. 2015

Applied Physics Letters

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The presence of dislocations arising from strain relaxation strongly affects polaritons through their photonic component and ultimately limits experiments involving polariton propagation. In this work, we investigate the range of growth parameters to achieve high optical quality GaAs/AlxGa1−xAs-based microcavities containing strained InxGa1−xAs quantum wells and using differential interference contrast (Nomarski) microscopy deduce a design rule for homogeneous versus disordered structures. We illustrate the effect of disorder by contrasting observations of polariton condensates in relaxed and unrelaxed microcavities. In our optimized device, we generate a polariton condensate and deduce a lifetime for the interacting polariton fluid of 39 ± 2 ps.

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“…Today's commercial solar cells are predominantly fabricated on the basis of crystalline silicon. However, to be used efficiently in solar cells, silicon needs to be refined to 99.999% purity [1]. Although Silicon solar cells have produced high efficiencies, high processing costs make it unsuitable for large scale requirements.…”

Section: Introductionmentioning

confidence: 99%

“…Cu-chalcopyrite semiconductor materials are used as layers in heterojunction solar cells. These materials exhibit a direct band gap in the range between about 1 and 3.5 eV and absorb the sunlight within a layer of a few microns thickness due to their high absorption coefficients of almost 10 5 cm -1 [1] and they crystallize in the tetragonal structure. The ternary compound CuAlS 2 is a promising material for its technological applications such as in opto-electronics and photovoltaic.…”

Section: Introductionmentioning

confidence: 99%