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Cited by 4 publications
(2 citation statements)
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“…The interactions between the Si atoms were modeled by a Tersoff potential using the parameters given by Tersoff for good elastic constant predictions [69,70]. The interactions between the model W atoms were modeled using the analytical embedded atom method approach [71][72][73] with the parameters listed in Table I. A Morse potential, , for r in Å and in eV, was used for the cross interaction between the W and Si atoms.…”
Section: Interatomic Potentialsmentioning
confidence: 99%
“…The interactions between the Si atoms were modeled by a Tersoff potential using the parameters given by Tersoff for good elastic constant predictions [69,70]. The interactions between the model W atoms were modeled using the analytical embedded atom method approach [71][72][73] with the parameters listed in Table I. A Morse potential, , for r in Å and in eV, was used for the cross interaction between the W and Si atoms.…”
Section: Interatomic Potentialsmentioning
confidence: 99%
“…There is a large variety of simulation methods for coating deposition, ranging from very accurate models, derived from quantum-mechanical calculations, to reactor-scale simulations [2]. In general, the former methods can reach very high levels of detail and complexity, at the expenses of reducing the time and space scales of the analysis, and vice-versa [2].…”
Section: Introductionmentioning
confidence: 99%