2009
DOI: 10.1002/smll.200901100
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Abstract: Voltage-controlled resistive switching is demonstrated in various gap systems on SiO2 substrate. The nanosized gaps are made by different means using different materials including metal, semiconductor, and metallic nonmetal. The switching site is further reduced by using multi-walled carbon nanotubes and single-walled carbon nanotubes. The switching in all the gap systems shares the same characteristics. This independence of switching on the material compositions of the electrodes, accompanied by observable da… Show more

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Cited by 74 publications
(90 citation statements)
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References 30 publications
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“…The switching properties obtained in this planar nanogap configuration are similar to those from vertical structures, confirming the same switching mechanism intrinsic to SiO x 18 . Note that more detailed discussions about this intrinsic SiO x switching mechanism are covered in our previous studies [17][18][19][20] .…”
Section: Planar G-sio X -G Nanogap Devicesmentioning
confidence: 98%
See 2 more Smart Citations
“…The switching properties obtained in this planar nanogap configuration are similar to those from vertical structures, confirming the same switching mechanism intrinsic to SiO x 18 . Note that more detailed discussions about this intrinsic SiO x switching mechanism are covered in our previous studies [17][18][19][20] .…”
Section: Planar G-sio X -G Nanogap Devicesmentioning
confidence: 98%
“…Electrical breakdown was induced ( Supplementary Fig. S7a) in the graphene stripe to generate a narrow disruption region or nanogap 19 (bottom panel, Fig. 5b).…”
Section: Planar G-sio X -G Nanogap Devicesmentioning
confidence: 99%
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“…The concept of using empty nanogap electrodes as switching devices is potentially far more interesting than conventional structures, owing to the simplicity of the system from a fabrication point of view (no insulator/semiconductor material is required) and the possibility of increasing device density. The cause of switching is still debated, being attributed to either conductive filaments forming through the substrate [28], [30]- [33] or changes in the nanogap dimensions leading to different values of tunnel current [34]- [45] . The apparent bottleneck to the broad adoption of this type of approach however is the difficulty of the fabrication of nanogap electrodes at high throughput and low cost.…”
Section: Introductionmentioning
confidence: 99%
“…Previous studies have shown that a M-I-M structure with I = SiO 2 yields a robust resistive switch 26−29 in which a conducting filament leads to a metallic ON state. In addition, studies have shown that the switching property is independent of a range of metallic electrode materials 30 and thus compatible with standard fabrication technology. Figure 2a shows a representative false-color scanning electron microscopic (SEM) image of a test device in which two resistive-switch elements or nodes were fabricated on a single nanowire.…”
mentioning
confidence: 86%