Electronic transport measurements in graphene nanoribbons

Han, Melinda; Özyilmaz, Barbaros; Zhang, Y.; Jarillo-Herero, P.; Kim, Philip

doi:10.1002/pssb.200776197

Cited by 50 publications

(58 citation statements)

References 16 publications

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“…Despite its huge potential for applications in electronic devices, [3][4][5][6] there are seveal reasons to consider alternatives to graphene. An important motivation is provided by the fact that pristine graphene is a semimetal, i.e., its conduction and valence bands touch at the neutrality (Dirac) point.…”

Section: Introductionmentioning

confidence: 99%

Spin susceptibility of two-dimensional transition-metal dichalcogenides

2014

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We have obtained analytical expressions for the q-dependent static spin susceptibility of monolayer transition metal dichalcogenides, considering both the electron-doped and hole-doped cases. Our results are applied to calculate spin-related physical observables of monolayer MoS2, focusing especially on in-plane/out-of-plane anisotropies. We find that the hole-mediated RKKY exchange interaction for in-plane impurity-spin components decays with the power law R −5/2 as a function of distance R, which deviates from the R −2 power law normally exhibited by a two-dimensional Fermi liquid. In contrast, the out-of-plane spin response shows the familiar R −2 long-range behavior. We also use the spin susceptibility to define a collective g-factor for hole-doped MoS2 systems and discuss its density-dependent anisotropy.

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Section: Introductionmentioning

confidence: 99%

Spin susceptibility of two-dimensional transition-metal dichalcogenides

2014

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“…This honeycomb network could be the basic building block of other important allotropes of carbonic materials: graphite, nanotubes and fullerenes 1 . Recent investigations have revealed that graphene has several unique properties including the quantum Hall effect at room temperature [2][3][4][5] , ambipolar field effect 6 , optical properties 7 , high electron mobility [8][9][10] and detection of single molecule adsorption events 11 . The exceptional properties of graphene also favor its implementation in a myriad of devices.…”

Section: -Introductionmentioning

confidence: 99%

Growth of large-area graphene films from metal-carbon melts

Amini¹,

Garay²,

Liu³

et al. 2010

Journal of Applied Physics

132

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We have demonstrated a new method for the large-area graphene growth, which can lead to a scalable low-cost high-throughput production technology. The method is based on growing single-layer or few-layer graphene films from a molten phase. The process involves dissolving carbon inside a molten metal at a specified temperature and then allowing the dissolved carbon to nucleate and grow on top of the melt at a lower temperature. The examined metals for the metal -carbon melts included copper and nickel. For the latter, pristine single layer graphene was grown successfully. The resulting graphene layers were subjected to detailed microscopic and Raman spectroscopic characterization.The deconvolution of the Raman 2D band was used to accurately determine the number of atomic planes in the resulting graphene layers and access their quality. The results indicate that our technology can provide bulk graphite films, few-layer graphene as well as high-quality single layer graphene on metals. Our approach can also be used for producing graphene-metal thermal interface materials for thermal management applications.

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“…1 By using a state-of-the-art patterning technique like e-beam lithography, a narrow strip of one-dimensional graphene nanoribbon (GNR) 2,3 is possible from a 2D graphene monolayer. 4,5 Theoretical studies on the GNR field-effect transistors (FETs) with perfect edges have been reported. [6][7][8][9] The understanding of edge effects on the device performance, however, is essential because the state-of-the-art lithography technique is far from the atomistic precision.…”

mentioning

confidence: 99%

“…The following device parameters are used in the simulation. A 20-nm-long GNR channel is connected to metal source and drain 4,5 , and Schottky barriers form between the channel and the source (drain) contacts. The the quantum-tunneling current through the localized states in the band gap energy is larger than the current carried by the conduction and the valence bands.…”

mentioning

confidence: 99%

Effect of edge roughness in graphene nanoribbon transistors

Yoon

Guo

2007

Applied Physics Letters

155

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The effects of edge irregularity and mixed edge shapes on the characteristics of graphene nanoribbon transistors are examined by self-consistent atomistic simulations based on the non-equilibrium Green's function formalism. The minimal leakage current increases due to the localized states induced in the band gap, and the on-current decreases due to smaller quantum transmission and the self-consistent electrostatic effect in general.Although the ratio between the on-current and minimal leakage current decreases, the transistor still switches even in the presence of edge roughness. The variation between devices, however, can be large, especially for a short channel length.

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Electronic transport measurements in graphene nanoribbons

Cited by 50 publications

References 16 publications

Spin susceptibility of two-dimensional transition-metal dichalcogenides

Spin susceptibility of two-dimensional transition-metal dichalcogenides

Growth of large-area graphene films from metal-carbon melts

Effect of edge roughness in graphene nanoribbon transistors

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