High‐Performance Broadband Photodetector Using Solution‐Processible PbSe–TiO<sub>2</sub>–Graphene Hybrids

Manga, Kiran Kumar; Wang, Junzhong; Lin, Ming; Zhang, Jie; Nesládek, Miloš; Nalla, Venkatram; Ji, Wei; Loh, Kian Ping

doi:10.1002/adma.201104399

Cited by 154 publications

(121 citation statements)

References 21 publications

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“…4a, the LDR of D4 device is B93 dB (B85 dB for D5 device; Supplementary Fig. 8), which is comparable to that of Si PDs (B120 dB) and significantly higher than that of InGaAs PDs (B66 dB) 24,26 . The LDR increases with increasing the bias voltage ( Supplementary Fig.…”

Section: Resultsmentioning

confidence: 49%

High photoresponsivity in an all-graphene p–n vertical junction photodetector

et al. 2014

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Intensive studies have recently been performed on graphene-based photodetectors, but most of them are based on field effect transistor structures containing mechanically exfoliated graphene, not suitable for practical large-scale device applications. Here we report highefficient photodetector behaviours of chemical vapor deposition grown all-graphene p-n vertical-type tunnelling diodes. The observed photodetector characteristics well follow what are expected from its band structure and the tunnelling of current through the interlayer between the metallic p-and n-graphene layers. High detectivity (B10 12 cm Hz 1/2 W À 1 ) and responsivity (0.4B1.0 A W À 1 ) are achieved in the broad spectral range from ultraviolet to near-infrared and the photoresponse is almost consistent under 6-month operations. The high photodetector performance of the graphene p-n vertical diodes can be understood by the high photocurrent gain and the carrier multiplication arising from impact ionization in graphene.

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Section: Resultsmentioning

confidence: 49%

High photoresponsivity in an all-graphene p–n vertical junction photodetector

et al. 2014

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“…13,[39][40][41] Specific detectivity is another figure of merit for photodetectors, which is related to the sensitivity that a detector can distinguish from the background noise. The shot noise from the dark current is assumed to be the major contributor to the total noise and the specific detectivity given by D*=RA 1/2 /(2qId) 1/2 , 13 where R is the photoresponsivity, A is the area of the detector, q is the unit of charge, and Id is the dark current.…”

Section: Resultsmentioning

confidence: 99%

Role of Metal Contacts in High-Performance Phototransistors Based on WSe₂ Monolayers

et al. 2014

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ABSTRACT:Phototransistors based on monolayer transition metal dichalcogenides (TMD) have high photosensitivity due to their direct band gap transition. However, there is a lack of understanding of the effect of metal contacts on the performance of atomically thin TMD phototransistors. Here, we fabricate phototransistors based on large-area chemical vapor deposition (CVD) tungsten diselenide (WSe2) monolayers contacted with the metals of different work function values. We found that the low Schottky-contact WSe2 phototransistors exhibit a very high photo gain (10 5 ) and specific detectivity (10 14 Jones), values higher than commercial Si-and InGaAs-based photodetectors; however, the response speed is longer than 5s in ambient. In contrast, the response speed of the high Schottky-contact phototransistors display a fast response time shorter than 23ms, but the photo gain and specific detectivity decrease by several orders of magnitude.Moreover, the fast response speed of the high Schottky-contact devices is maintained for a few months in ambient. This study demonstrates that the contact plays an important role in TMD 2 phototransistors, and barrier height tuning is critical for optimizing the photoresponse and photoresponsivity. KEYWORDS:Photodetector · Contact effect · Schottky barrier · Tungsten diselenide · 2d materialThe monolayer two dimensional (2D) transition metal dichalcogenides (TMDs) are potentially important building blocks for nanoscale optoelectronics due to their unique optical properties. 1-9Recently, there has been much interest in the molybdenum disulfide (MoS2) Jones. However, the photocurrents for the Pd-contacted devices take more than 5s to saturate in ambient air. In contrast, the high Schottky-barrier WSe2 devices using low work function Ti metal contacts present a much faster response time of <23ms, and better photocurrent linearity as a function of incident optical power. We suggest a qualitative mechanism based on metal/semiconductor junction energy band diagrams to explain these distinctly different phenomena. RESULTS AND DISCUSSIONThe large area WSe2 monolayers were grown on sapphire by the vapour-phase reaction of WO3 and Se powders in a hot-wall CVD chamber as described in our previous work. 22 After growth, the films were transferred to 300nm SiO2/Si substrates. Figure 1a shows the optical 4 image of a ~1×1cm transferred film on SiO2/Si substrate, and Figure 1b is the magnified optical image with no obvious optical contrast difference across the field, indicating that the transferred film was uniform. 23Atomic force microscopy (AFM), Raman spectroscopy, and photoluminescence (PL) were used to characterize the number of layers and quality of the transferred films. As shown in Figures 1c and 1d, the representative thickness of the transferred films is ~0.97nm, which is slightly thicker than the as-grown monolayer WSe2 on SiO2/Si, 22,24,25 and this could be attributed to residual chemical contamination of the transferred process or the substrate effect. 26 The Raman spectra for th...

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“…Interestingly, based on the bulk single crystal, Huang's group fabricated a lateral-structured device with a maximum PCE of 5.36% at 170 K and a comparable JSC to the best thin-film solar cells [106]. Photodetectors are another device for realizing photoelectric conversion, and have attracted much attention because of their extensive applications, which include biological sensing, camera imaging, missile warning, and communication [107][108][109][110]. Organic-inorganic hybrid perovskite single crystals have also been utilized to fabricate photodetectors [111][112][113].…”

Section: Application Of Halide Perovskite Single Crystalsmentioning

confidence: 99%

Metal Halide Perovskite Single Crystals: From Growth Process to Application

Zhang

Song

et al. 2018

Crystals

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Abstract:As a strong competitor in the field of optoelectronic applications, organic-inorganic metal hybrid perovskites have been paid much attention because of their superior characteristics, which include broad absorption from visible to near-infrared region, tunable optical and electronic properties, high charge mobility, long exciton diffusion length and carrier recombination lifetime, etc. It is noted that perovskite single crystals show remarkably low trap-state densities and long carrier diffusion lengths, which are even comparable with the best photovoltaic-quality silicon, and thus are expected to provide better optoelectronic performance. This paper reviews the recent development of crystal growth in single-, mixed-organic-cation and fully inorganic halide perovskite single crystals, in particular the solution approach. Furthermore, the application of metal hybrid perovskite single crystals and future perspectives are also highlighted.

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High‐Performance Broadband Photodetector Using Solution‐Processible PbSe–TiO₂–Graphene Hybrids

Cited by 154 publications

References 21 publications

High photoresponsivity in an all-graphene p–n vertical junction photodetector

High photoresponsivity in an all-graphene p–n vertical junction photodetector

Role of Metal Contacts in High-Performance Phototransistors Based on WSe₂ Monolayers

Metal Halide Perovskite Single Crystals: From Growth Process to Application

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High‐Performance Broadband Photodetector Using Solution‐Processible PbSe–TiO2–Graphene Hybrids

Cited by 154 publications

References 21 publications

High photoresponsivity in an all-graphene p–n vertical junction photodetector

High photoresponsivity in an all-graphene p–n vertical junction photodetector

Role of Metal Contacts in High-Performance Phototransistors Based on WSe2 Monolayers

Metal Halide Perovskite Single Crystals: From Growth Process to Application

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High‐Performance Broadband Photodetector Using Solution‐Processible PbSe–TiO₂–Graphene Hybrids

Role of Metal Contacts in High-Performance Phototransistors Based on WSe₂ Monolayers