10% Efficiency Cu2ZnSn(S,Se)4 thin film solar cells fabricated by magnetron sputtering with enlarged depletion region width

Jian-jun, LI; Wang, Hongxia; Luo, Miao; Tang, Jiang; Cheng, Chuwang; Liu, Wei; Liu, Fangfang; Sun, Yun; Han, Junbo; Zhang, Yi

doi:10.1016/j.solmat.2016.02.002

Cited by 157 publications

(70 citation statements)

References 29 publications

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“…4,23 As shown in Fig. 7 23 However, when further increasing the temperature, the W D is reduced instead, which is in accordance with the decrease in the cell efficiency.…”

supporting

confidence: 71%

“…4,23 As shown in Fig. 7 23 However, when further increasing the temperature, the W D is reduced instead, which is in accordance with the decrease in the cell efficiency. Besides, the defect density of the lm surface region is also estimated from the difference between the charge density of C-V and DLCP measurement, as shown in Table 1.…”

supporting

confidence: 71%

“…S2. † As we know that the carrier and defect densities of selenized CZTSSe absorber have a deeply inuence on the V oc and PCE, 4,23 it is expected that the changes in V oc and PCE may derive the different carrier and defect densities of the selenized CZTSSe lm.…”

mentioning

confidence: 99%

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Fabrication of Cu₂ZnSn(S,Se)₄photovoltaic devices with 10% efficiency by optimizing the annealing temperature of precursor films

Zhang

Xue

et al. 2018

RSC Adv.

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The annealing temperature of solution-processed Cu 2 ZnSn(S,Se) 4 (CZTSSe) precursor films has been carefully optimized for favorable selenization. At higher temperature, more solvent will be removed, and the crystallinity of the precursor films can be improved. It is found that, although the crystallinity of selenized film is continuously enhanced by increasing the temperature, a dense CZTSSe film with round and large grains can only be achieved at medium high temperature ranging from 350 to 400 C. Further investigation reveals that, in this regime, the carrier and defect densities are obviously reduced, leading to average photoelectric conversion efficiency (PCE) improved from 5.1% to 9.4%. An optimal annealing temperature of 380 C is obtained and up to 10.04% of photoelectric conversion efficiency has been achieved.

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“…4,23 As shown in Fig. 7 23 However, when further increasing the temperature, the W D is reduced instead, which is in accordance with the decrease in the cell efficiency.…”

supporting

confidence: 71%

supporting

confidence: 71%

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Fabrication of Cu₂ZnSn(S,Se)₄photovoltaic devices with 10% efficiency by optimizing the annealing temperature of precursor films

Zhang

Xue

et al. 2018

RSC Adv.

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“…It can be seen that the Raman spectroscopy of CAZTSSe ( x = 2–8%) shows highly similar peaks to that of the reference CZTSSe ( x = 0%). Moreover, the characteristic peaks of kesterite CZTSe phase are located at the vicinity of 173, 198, and 242 cm −1 , and the peaks in the vicinity of 323 cm −1 correspond well with kesterite CZTS phase . Raman characterization further confirmed that no obvious secondary phases are observed in all the samples.…”

Section: Resultsmentioning

confidence: 57%

Green Atmospheric Aqueous Solution Deposition for High Performance Cu₂ZnSn(S,Se)₄ Thin Film Solar Cells

Tian

et al. 2018

Solar RRL

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Environment‐friendly process, low production cost, and simple operation are regarded as key factors for scalable kesterite photovoltaic applications. Herein a green ammonium thioglycolate (TGAm)‐based aqueous solution route has been developed to deposit Cu2ZnSnS4 films. It is found that sinstering in ambient air is as good as in argon, making the production process more affordable and reproducible. TGAm is more active than other alkylthiols with longer alkyl chains and has a strong coordination capability toward metal ions, which is a key factor in the dissolution of a series of metal oxides. Meanwhile, TGAm is widely used in biopharmaceuticals and hairspray, demonstrating good biological compatibility. Moreover, a low level of Ag doping can be successfully incorporated into the host lattice of the CZTSSe to form a homogeneous (Cu1−x,Agx)2ZnSn(S,Se)4 (CAZTSSe) alloy material by this aqueous process. Benefiting from the effect of Ag doping, the initial power conversion efficiency is successfully enhanced from 5.86% (x = 0) to 7.38% (x = 2%).

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“…Among them, copper indium gallium selenide (CIGS)-based and cadmium telluride (CdTe)-based solar cells are promising and have realized a conversion efficiency of 21.7% and 19.6% [6, 7], respectively. In recent years, another candidate material Cu 2 ZnSnS x Se 4 − x (CZTSSe) has been investigated as it is earth-abundant and has an environment-friendly composition [8, 9]. Although an impressive conversion efficiency of 12.6% has been achieved by a hydrazine-based solution process, this compound encountered complexities in terms of phase and defect control [10].…”

Section: Introductionmentioning

confidence: 99%

Enhanced Photovoltaic Properties in Sb2S3 Planar Heterojunction Solar Cell with a Fast Selenylation Approach

et al. 2018

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Poor thermostability of Sb2S3 in vacuum hinders the possibility of achieving high-quality crystalline films. In order to enhance the photovoltaic properties of Sb2S3 planar heterojunction solar cells, a selenylation-based post-treatment approach has been employed. Selenylation performed over 15 min on the Sb2S3 film resulted in an enhancement in the conversion efficiency from ~ 0.01 to 2.20%. Effect of the selenylation on the evolution of morphology, crystal structure, composition distributions, and photovoltaic behavior has been investigated. The variation in the energy levels of Sb2S3/CdS junction has been also been discussed. Results show that selenylation not only enhanced the crystallinity of Sb2S3 film but also provided a suitable energy level which facilitated charge transport from absorber to the buffer layer.

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10% Efficiency Cu2ZnSn(S,Se)4 thin film solar cells fabricated by magnetron sputtering with enlarged depletion region width

Cited by 157 publications

References 29 publications

Fabrication of Cu₂ZnSn(S,Se)₄photovoltaic devices with 10% efficiency by optimizing the annealing temperature of precursor films

Fabrication of Cu₂ZnSn(S,Se)₄photovoltaic devices with 10% efficiency by optimizing the annealing temperature of precursor films

Green Atmospheric Aqueous Solution Deposition for High Performance Cu₂ZnSn(S,Se)₄ Thin Film Solar Cells

Enhanced Photovoltaic Properties in Sb2S3 Planar Heterojunction Solar Cell with a Fast Selenylation Approach

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10% Efficiency Cu2ZnSn(S,Se)4 thin film solar cells fabricated by magnetron sputtering with enlarged depletion region width

Cited by 157 publications

References 29 publications

Fabrication of Cu2ZnSn(S,Se)4photovoltaic devices with 10% efficiency by optimizing the annealing temperature of precursor films

Fabrication of Cu2ZnSn(S,Se)4photovoltaic devices with 10% efficiency by optimizing the annealing temperature of precursor films

Green Atmospheric Aqueous Solution Deposition for High Performance Cu2ZnSn(S,Se)4 Thin Film Solar Cells

Enhanced Photovoltaic Properties in Sb2S3 Planar Heterojunction Solar Cell with a Fast Selenylation Approach

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Product

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Fabrication of Cu₂ZnSn(S,Se)₄photovoltaic devices with 10% efficiency by optimizing the annealing temperature of precursor films

Fabrication of Cu₂ZnSn(S,Se)₄photovoltaic devices with 10% efficiency by optimizing the annealing temperature of precursor films

Green Atmospheric Aqueous Solution Deposition for High Performance Cu₂ZnSn(S,Se)₄ Thin Film Solar Cells