1/ <i>f</i> noise reduction of metal-oxide-semiconductor transistors by cycling from inversion to accumulation

Bloom, I.; Nemirovsky, Y.

doi:10.1063/1.105130

Cited by 110 publications

(90 citation statements)

References 9 publications

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“…Since trap densities in MOSFETs are commonly U-shaped in energy [43], [44], this explains that LF noise in MOSFETs decreases when the device is periodically turned on and off [5]- [7], [42]. A circuit designer may expect a large MOSFET to behave predictably in this way.…”

Section: E Generalisation To Trap Distributionmentioning

confidence: 99%

“…If these conditions are satisfied, a uniform distribution of traps in and results. To explain that turning a device on and off periodically leads to a decrease in the LF noise PSD [5]- [7], [42], we must conclude that the distribution of trap 's is not uniform in . This can be the distribution of 's in a large device with very many traps, but it can also be the distribution of 's over an ensemble of small devices, each with a limited number of traps.…”

Section: E Generalisation To Trap Distributionmentioning

confidence: 99%

“…This can be the distribution of 's in a large device with very many traps, but it can also be the distribution of 's over an ensemble of small devices, each with a limited number of traps. 5 One likely scenario [43] is that the trap density deeper in the bandgap is lower. 6 Fig.…”

Section: E Generalisation To Trap Distributionmentioning

confidence: 99%

“…The PSD of an RTS has a Lorentzian shape [27], described by (5). The relation between the trap time constants and and the RTS parameters and is given by and rad/s…”

Section: A Steady-state Behavior Of Rts Noisementioning

confidence: 99%

“…2) LF noise in small devices shows extreme variability; measured LF noise can vary by several orders of magnitude between different nominally identical devices [4]. 3) MOSFET LF noise is reduced when the device is subjected to large signal excitation (LSE) [5]- [7]. In other words, turning a MOSFET off for some time before turning it on reduces its noise when it is on.…”

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confidence: 99%

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Low-Frequency Noise Phenomena in Switched MOSFETs

Wel

Klumperink

Kolhatkar

et al. 2007

IEEE J. Solid-State Circuits

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Abstract-In small-area MOSFETs widely used in analog and RF circuit design, low-frequency (LF) noise behavior is increasingly dominated by single-electron effects. In this paper, we review the limitations of current compact noise models which do not model such single-electron effects. We present measurement results that illustrate typical LF noise behavior in small-area MOSFETs, and a model based on Shockley-Read-Hall statistics to explain the behavior. Finally, we treat practical examples that illustrate the relevance of these effects to analog circuit design. To the analog circuit designer, awareness of these single-electron noise phenomena is crucial if optimal circuits are to be designed, especially since the effects can aid in low-noise circuit design if used properly, while they may be detrimental to performance if inadvertently applied.Index Terms-CMOS, flicker noise, large-signal excitation, lowfrequency noise, low-noise circuit design, MOSFET, noise reduction, RTS noise, switched biasing, 1 noise.

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Section: E Generalisation To Trap Distributionmentioning

confidence: 99%

Section: E Generalisation To Trap Distributionmentioning

confidence: 99%

Section: E Generalisation To Trap Distributionmentioning

confidence: 99%

“…The PSD of an RTS has a Lorentzian shape [27], described by (5). The relation between the trap time constants and and the RTS parameters and is given by and rad/s…”

Section: A Steady-state Behavior Of Rts Noisementioning

confidence: 99%

mentioning

confidence: 99%

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