1/f Noise in CMOS transistors for analog applications from subthreshold to saturation

Jakobson, C.G.; Bloom, I.; Nemirovsky, Y.

doi:10.1016/s0038-1101(98)00162-2

Cited by 92 publications

(52 citation statements)

References 15 publications

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“…The values of K and α obtained from these fits are given in the last two columns of Table I. The magnitude of K scales closely with I DS over most of the investigated range of V GS , as anticipated [8]. The average value of α is 0.95.…”

Section: Determination Of Current Noise Power Spectral Density S Isupporting

confidence: 67%

“…m long gates of the measured device behave like a single 10 μm long gate. The relationship used to derive S N from Table I results is a first order approximation based on relations shown in references [8] and [12]: (4) A temporal 1/f noise data set, Z N , with one datapoint for each timestep over the simulated period, is generated by taking the inverse FFT of , with a random phase for each frequency. The current noise, I NOISE , for each simulated TFT is created by scaling Z N by the I DS that corresponds to the TFT current for each timestep, and by the device dimensions according to the equation: (5) The resulting I NOISE provides a reasonable approximation for 1/f noise current behavior of the simulated TFTs.…”

Section: Use Of Poly-si Noise Results In Imager Array Developmentmentioning

confidence: 99%

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Noise Characterization of Polycrystalline Silicon Thin Film Transistors for X-ray Imagers Based on Active Pixel Architectures

et al. 2008

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An examination of the noise of polycrystalline silicon thin film transistors, in the context of flat panel x-ray imager development, is reported. The study was conducted in the spirit of exploring how the 1/f, shot and thermal noise components of poly-Si TFTs, determined from current noise power spectral density measurements, as well as through calculation, can be used to assist in the development of imagers incorporating pixel amplification circuits based on such transistors.

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Section: Determination Of Current Noise Power Spectral Density S Isupporting

confidence: 67%

Section: Use Of Poly-si Noise Results In Imager Array Developmentmentioning

confidence: 99%

Noise Characterization of Polycrystalline Silicon Thin Film Transistors for X-ray Imagers Based on Active Pixel Architectures

et al. 2008

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“…In most CMOS technologies, pMOS transistors have one or two orders of magnitude lower 1/f noise than do nMOS transistors [22]. In our amplifier, by using pMOS input transistors, we reduced the 1/f noise.…”

Section: Noise Analysismentioning

confidence: 99%

Design of a CMOS Potentiostat Circuit for Electrochemical Detector Arrays

Ayers

Gillis

Lindau

et al. 2007

IEEE Trans. Circuits Syst. I

101

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High-throughput electrode arrays are required for advancing devices for testing the effect of drugs on cellular function. In this paper, we present design criteria for a potentiostat circuit that is capable of measuring transient amperometric oxidation currents at the surface of an electrode with submillisecond time resolution and picoampere current resolution. The potentiostat is a regulated cascode stage in which a high-gain amplifier maintains the electrode voltage through a negative feedback loop. The potentiostat uses a new shared amplifier structure in which all of the amplifiers in a given row of detectors share a common half circuit permitting us to use fewer transistors per detector. We also present measurements from a test chip that was fabricated in a 0.5-μm, 5-V CMOS process through MOSIS. Each detector occupied a layout area of 35μm × 15μm and contained eight transistors and a 50-fF integrating capacitor. The rms current noise at 2kHz bandwidth is ≈ 110fA. The maximum charge storage capacity at 2kHz is 1.26 × 10 6 electrons.

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“…Therefore, here only flicker noise has been considered to introduce the concept developed. There exist numerous models for flicker noise in the MOS transistor [2][3][4][5][6][7][8][9][10]. In accordance with the most popular model [10], the flicker noise due to a MOS transistor can be lumped as a voltage source at the gate and is given by…”

Section: Noise Model For Mostmentioning

confidence: 99%

Figure‐of‐Merit‐Based Area‐Constrained Design of Differential Amplifiers

Agarwal

Shekhar

2008

VLSI Design

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A new methodology based on the concept of figure of merit under area constraints is described for designing optimum performance differential amplifiers. First a figure of merit is introduced that includes the three performance parameters, namely, input-referred noise, differential dc gain, and unity-gain bandwidth. Expressions for these parameters have been derived analytically and finally arrived at an expression for the figure of merit. Next it is shown how these performance parameters vary with the relative allocation of the total available area between the input and load transistors. The figure of merit peaks at a certain value of relative area allocation in the range of 60% to 80% of the available area to the input transistors. The peak value of figure of merit is a function of area. However, it is independent of biasing current (and, therefore, power consumption) subject to the minimum current (and, therefore, a minimum power) required to keep all the transistors biased in the saturation region. The peak figure of merit and minimum power required to achieve the peak figure of merit are also plotted as a function of area. These analyses help in synthesizing optimal differential amplifier circuit designs under area constraints.

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1/f Noise in CMOS transistors for analog applications from subthreshold to saturation

Cited by 92 publications

References 15 publications

Noise Characterization of Polycrystalline Silicon Thin Film Transistors for X-ray Imagers Based on Active Pixel Architectures

Noise Characterization of Polycrystalline Silicon Thin Film Transistors for X-ray Imagers Based on Active Pixel Architectures

Design of a CMOS Potentiostat Circuit for Electrochemical Detector Arrays

Figure‐of‐Merit‐Based Area‐Constrained Design of Differential Amplifiers

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