1.55
                μ
                m
           InAs quantum dots grown on a GaAs substrate using a GaAsSb metamorphic buffer layer

Liu, H. Y.; Qiu, Ye; Jin, Chao-Yuan; Walther, T.; Cullis, A. G.

doi:10.1063/1.2898895

Cited by 39 publications

(35 citation statements)

References 21 publications

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“…10,11 Metamorphic buffer layers have been used to this effect. 12 However such large islands have proved to generate very large strain fields which consequently may nucleate threading dislocations when a conventional GaAs cap is deposited on top of the QD layer. 13 An alternative solution to this problem is to embed the InAs ͑or InGaAs͒ islands in a material with an intermediate lattice constant between itself and the substrate and acting as a quantum well ͑QW͒.…”

Section: Role Of Segregation In Inas/gaas Quantum Dot Structures Cappmentioning

confidence: 99%

Role of segregation in InAs/GaAs quantum dot structures capped with a GaAsSb strain-reduction layer

et al. 2009

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Please check the document version of this publication:• A submitted manuscript is the version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal.If the publication is distributed under the terms of Article 25fa of the Dutch Copyright Act, indicated by the "Taverne" license above, please follow below link for the End User Agreement: We report a combined experimental and theoretical analysis of Sb and In segregation during the epitaxial growth of InAs self-assembled quantum dot structures covered with a GaSbAs strain-reducing capping layer. Cross-sectional scanning tunneling microscopy shows strong Sb and In segregation which extends through the GaAsSb and into the GaAs matrix. We compare various existing models used to describe the exchange of group III and V atoms in semiconductors and conclude that commonly used methods that only consider segregation between two adjacent monolayers are insufficient to describe the experimental observations. We show that a three-layer model originally proposed for the SiGe system ͓D. J. Godbey and M. G. Ancona, J. Vac. Sci. Technol. A 15, 976 ͑1997͔͒ is instead capable of correctly describing the extended diffusion of both In and Sb atoms. Using atomistic modeling, we present strain maps of the quantum dot structures that show the propagation of the strain into the GaAs region is strongly affected by the shape and composition of the strain-reduction layer.

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Section: Role Of Segregation In Inas/gaas Quantum Dot Structures Cappmentioning

confidence: 99%

Role of segregation in InAs/GaAs quantum dot structures capped with a GaAsSb strain-reduction layer

et al. 2009

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“…The predicted behaviour was confirmed experimentally in self assembled quantum dots (QDs) capped with a strain reducing layer (SRL) (Liu et al 2006(Liu et al , 2008. The details of the sample used for comparison and studied through Scanning Tunneling Microscopy are as follows: a GaAs [001] substrate was covered by a GaAs buffer, followed by a 2.5 ML InAs layer, 6 nm GaSbAs and were finally capped with 100 nm GaAs.…”

Section: Resultsmentioning

confidence: 67%

The use of Abell–Tersoff potentials in atomistic simulations of InGaAsSb/GaAs

et al. 2008

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In this paper we show the use of an optimally parameterized empirical potential of the Abell-Tersoff type to study the strain energy of the quaternary alloy InGaAsSb. We use our results to compute modified segregation energies in an improved kinetic model of segregation for the combined effects of group III and V exchange processes during epitaxial growth and compare with experimental data from Scanning Tunnelling Microscopy.

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“…Quantum-dot (QD) light-emitting devices operated in the near infrared range have been widely investigated in recent years [1][2][3][4]. Due to its unique optical characteristics, high-power and temperature-insensitive QD laser diodes (LDs) have already been fabricated [1,2].…”

Section: Introductionmentioning

confidence: 99%

The transition mechanisms of type-II GaSb/GaAs quantum-dot infrared light-emitting diodes

Tseng

Lin

et al. 2011

Journal of Crystal Growth

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1.55 μ m InAs quantum dots grown on a GaAs substrate using a GaAsSb metamorphic buffer layer

Cited by 39 publications

References 21 publications

Role of segregation in InAs/GaAs quantum dot structures capped with a GaAsSb strain-reduction layer

Role of segregation in InAs/GaAs quantum dot structures capped with a GaAsSb strain-reduction layer

The use of Abell–Tersoff potentials in atomistic simulations of InGaAsSb/GaAs

The transition mechanisms of type-II GaSb/GaAs quantum-dot infrared light-emitting diodes

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