0.5‐V bulk‐driven CMOS operational amplifier

Kulej, Tomasz

doi:10.1049/iet-cds.2012.0372

Cited by 81 publications

(46 citation statements)

References 34 publications

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“…[21][22][23] Here, we present measured results, thus confirming feasibility of the circuits. This approach allows decreasing the minimum V DD /V TH ratio as compared with state of the art.…”

Section: Introductionsupporting

confidence: 81%

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Design and implementation of sub 0.5‐V OTAs in 0.18‐μm CMOS

Kulej

Khateb

2018

Circuit Theory & Apps

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A family of bulk-driven CMOS operational transconductance amplifiers (OTAs) has been designed for extremely low supply voltages (0.3-0.5 V). Three OTA design schemes with different gain boosting techniques and class AB input/output stages are discussed. A detailed comparison among these schemes has been presented in terms of performance characteristics such as voltage gain, gain-bandwidth product, slew rate, circuit sensitivity to process/mismatch variations, and silicon area. The design procedures for all the compared structures have been developed. The OTAs have been fabricated in a standard 0.18-μm n-well CMOS process from TSMC. Chip test results are in good agreement with theoretical predictions and simulations.

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Section: Introductionsupporting

confidence: 81%

“…21 To better understand the noise properties of the remaining OTAs, let us consider the block diagram of their input stages shown in Figure 4. 21 To better understand the noise properties of the remaining OTAs, let us consider the block diagram of their input stages shown in Figure 4.…”

Section: Performance Comparisonmentioning

confidence: 99%

Design and implementation of sub 0.5‐V OTAs in 0.18‐μm CMOS

Kulej

Khateb

2018

Circuit Theory & Apps

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“…In recent years, many low‐voltage circuits utilizing bulk‐driven transistors have been presented, showing improved performance in a low‐voltage environment . In this work, another example of a low‐voltage bulk‐driven circuit is addressed.…”

Section: Introductionmentioning

confidence: 99%

A 0.5 V bulk‐driven voltage follower/DC level shifter and its application in class AB output stage

Kulej

Blakiewicz

2014

Circuit Theory & Apps

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Summary A simple realization of a 0.5 V bulk‐driven voltage follower/direct current (DC) level shifter designed in a 0.18 µm CMOS technology is presented in the paper. The circuit is characterized by large input and output voltage swings and a DC voltage gain close to unity. The DC voltage shift between input and output terminals can be regulated in a certain interval around zero, by means of biasing current sinks. An application of the proposed voltage follower circuit for realization of a low‐voltage class AB output stage has also been described in the paper. Finally, the operational amplifier exploiting the proposed output stage has been presented and evaluated in detail. Copyright © 2014 John Wiley & Sons, Ltd.

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“…In order to overcome the reduction of the supply voltage and the high value of the threshold voltage, some new techniques have been presented in the literature e.g.,°oating-gate (FG), quasi-°oating-gate (QFG) and bulk-driven (BD) techniques. [46][47][48][49][50] Based on these techniques many interesting circuits were designed and published in the literature, such as voltage followers (VF), 6,7 operational ampli¯ers (Op-Amps), 8,9,47 operational transconductance ampli¯ers (OTAs), [10][11][12][13][14][15][16][17][18][48][49][50] second generation current conveyors (CCIIs), [19][20][21][22][23][24] current feedback ampli¯ers (CFAs), 19 current di®erencing transconductance ampli¯ers (CDeTAs), 26 di®erential-input bu®ered and external transconductance ampli¯ers (DBeTAs), 27 current mirrors (CMs), 28,29 di®erential voltage current conveyors (DVCCs), 30,31 di®erential di®erence current conveyors (DDCCs), 32 winner-take-all (WTAs) circuits, 33 bulk-controlled sub-threshold MOS resistors, 50 and others.…”

Section: Introductionmentioning

confidence: 99%

Sub-Volt Fully Balanced Differential Difference Amplifier

Khateb

Kumngern

Vlassis

et al. 2014

J CIRCUIT SYST COMP

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This paper presents a new CMOS structure for a fully balanced di®erential di®erence ampli¯er (FB-DDA) designed to operate from a sub-volt supply. This structure employs the bulk-driven quasi-°oating-gate (BD-QFG) technique to achieve the capability of an ultra-low voltage operation and an extended input voltage range. The proposed BD-QFG FB-DDA is suitable for ultra-low-voltage low-power applications. The circuit is designed with a single supply of 0.5 V and consumes only 357 nW of power. The proposed circuit was simulated in a 0.18-m TSMC CMOS technology and the simulation results prove its functionality and attractive parameters. An application example of a state variable¯lter is also presented to con¯rm the usefulness of the proposed BD-QFG FB-DDA.

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0.5‐V bulk‐driven CMOS operational amplifier

Cited by 81 publications

References 34 publications

Design and implementation of sub 0.5‐V OTAs in 0.18‐μm CMOS

Design and implementation of sub 0.5‐V OTAs in 0.18‐μm CMOS

A 0.5 V bulk‐driven voltage follower/DC level shifter and its application in class AB output stage

Sub-Volt Fully Balanced Differential Difference Amplifier

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