0.1-&lt;inline-formula&gt; &lt;tex-math notation="LaTeX"&gt;$\mu \text{m}$ &lt;/tex-math&gt; &lt;/inline-formula&gt; InAlN/GaN High Electron-Mobility Transistors for Power Amplifiers Operating at 71–76 and 81–86 GHz: Impact of Passivation and Gate Recess

Xu, Dong-Hui; Chu, Kanin; Diaz, J.; Ashman, Michael; Komiak, J.J.; Pleasant, L. Mt.; Vera, A.; Seekell, P.; Yang, Xiaoping; Creamer, Carlton; Nichols, K. B.; Duh, K.H.G.; Smith, P.M.; Chao, P.C.; Dong, Lin; Ye, Peide D.

doi:10.1109/ted.2016.2579160

Cited by 12 publications

(4 citation statements)

References 10 publications

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“…Additionally, scaling down the source-drain distance and adoption of strongly polarized high-Al-content heterojunction are meaningful to the reduction of access resistance [19][20][21]. Either dielectric deposition or plasma treatment is utilized in the access region and gate region to suppress RF dispersion and gate leakage current, respectively [22][23][24][25][26]. Besides, a sufficiently high aspect ratio should be maintained to Yuwei Zhou, Jiejie Zhu, Minhan Mi, Meng Zhang, Pengfei Wang, Yutong Han, Sheng Wu, Jielong Liu, Qing Zhu, Yilin Chen, Bin Hou, Xiaohua Ma, Member, IEEE, and Yue Hao, Senior Member, IEEE A strengthen the gate control and further diminish the buffer leakage current induced by DIBL.…”

Section: Introductionmentioning

confidence: 99%

Analysis of Low Voltage RF Power Capability on AlGaN/GaN and InAlN/GaN HEMTs for Terminal Applications

Zhou

Zhu

et al. 2021

IEEE J. Electron Devices Soc.

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In this work, low voltage RF power capability on AlGaN/GaN and InAlN/GaN HEMTs is analysed from the perspective of DC and pulse characteristics, for terminal applications whose operating voltage is usually in the range of 3 to 15 V. Device fabrication is performed on mature AlGaN/GaN heterojunction as well as strongly polarized InAlN/GaN heterojunction, to make a comparison of low voltage RF power capability between two devices. Although it suffers from relatively severe RF dispersion, InAlN/GaN HEMT delivers higher output power density (Pout) than its opponent, benefiting from the lower parasitic resistance and knee voltage as well as higher output current density. At 8 GHz, Pout of 1.62 W/mm and 1.10 W/mm are achieved for InAlN/GaN and AlGaN/GaN HEMT, respectively, both of which are biased at class AB operation and Vds of 9 V. However, the tremendous degradation of power added efficiency (PAE) occurs as the higher drain voltage is applied on InAlN/GaN HEMT, as the result of the severe gate leakage. What is more, a higher PAE is more necessary than Pout for terminal applications. Either InAlN/GaN HEMT or AlGaN/GaN HEMT has its own specific voltage range to deliver higher PAE. Concretely, InAlN/GaN HEMT is more suitable to applications with operating voltage not exceeding 6 V, and AlGaN/GaN HEMT is preferred for ones with relatively higher voltage, accompanied by the decent PAE as high as 62% to 66% and moderate Pout to meet the demand of various low voltage terminal applications.

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Section: Introductionmentioning

confidence: 99%

Analysis of Low Voltage RF Power Capability on AlGaN/GaN and InAlN/GaN HEMTs for Terminal Applications

Zhou

Zhu

et al. 2021

IEEE J. Electron Devices Soc.

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“…2. The bottom of the gate is firmly deposited on the 100 nm opening and the top L G distribution is defined by the lateral etching of SiN x layers [14]. The charges accumulated on the SiN x surface edges may deflect the incoming ions, leaving a trapezoidalshaped top gate [15].…”

Section: Device Fabricationmentioning

confidence: 99%

Over 10W/mm High Power Density AlGaN/GaN HEMTs With Small Gate Length by the Stepper Lithography for Ka-Band Applications

Lee

Lin

Chang

et al. 2023

IEEE J. Electron Devices Soc.

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This study reports AlGaN/GaN high-electron-mobility transistors (HEMTs) fabricated by the Stepper Lithography on a 4-inch wafer for Ka-Band applications. Small gate length (L G ) of 100 nm was achieved through a 2-Step Photolithography Process and the gate region of the AlGaN/GaN HEMT was defined by using two lithography steps to form gamma-shaped gates. The 4-inch AlGaN/GaN HEMT wafer demonstrated high electrical performance uniformity with respect to the maximum drain-source current density (I DSS ), the peak extrinsic output transconductance (G m ), and the threshold voltage (V th ). At V DS = 20 V, the AlGaN/GaN HEMT exhibits an I DSS of 1004.2 mA/mm, a Gm value of 363.6 mS/mm, a maximum output power density (P OUT (MAX) ) of over 10 W/mm, and a power gain of 8.8 dB with a maximum 51.1% Power-added efficiency (PAE) at 28 GHz in Continuous Wave (CW) mode. The results show the potential of AlGaN/GaN HEMT fabrication with high yield and outstanding RF performance using Stepper Lithography for 5G applications.INDEX TERMS 5G, high uniformity, output power, stepper lithography, small gate length.

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“…Aggressive scaling of gate length and device dimensions further push the high‐frequency operation of GaN‐HEMTs 7–21 . There has been a remarkable improvement in the cut‐off frequency of GaN‐HEMTs in recent years enabled by smaller gate lengths ( L G < 100 nm) and reduction in parasitic resistances.…”

Section: Introductionmentioning

confidence: 99%

L _G 55 nm T‐gate InGaN / GaN channel based high electron mobility transistors for stable transconductance operation

Sengodan

Mohanbabu

et al. 2022

Int J RF Mic Comp-Aid Eng

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Nonlinearity operation and early gain suppression limit the high‐frequency operation of GaN‐HEMTs. Nonlinear transconductance and resistance drop‐off at relatively large VGS are the major sources for the nonlinear operation of the high electron mobility transistors (HEMTs). In this article, we present the In0.1Ga0.9N channel‐based HEMTs for stable transconductance operation. The device performance is evaluated for both Al0.3Ga0.7N, and In0.17Al0.83N barrier materials with silicon nitride passivation. The In0.17Al0.83N/In0.1Ga0.9N/GaN heterostructure device shows remarkable improvement in gate voltage swing than Al0.3Ga0.7N/In0.1Ga0.9N/GaN. LG 55 nm T‐gate In0.17Al0.83N/In0.1Ga0.9N HEMT exhibited 5 A/mm of maximum drain current density (IDS, max) for 1 V gate bias, 0.72 S/mm of stable transconductance (gm,max), 43.5 V of off‐state breakdown voltage (VBR), and 275/289 GHz of fT/fmax. The HEMT with AlGaN/InGaN/GaN heterostructure showed 2.81 A/mm of maximum drain current density for 1 V gate bias, 0.66 S/mm of stable transconductance, 55.3 V of VBR, and 252/263 GHz of fT/fmax. Moreover, a highest theoretical OIP3 value of 61.2 and 67.6 dBm obtained for AlGaN and InAlN barrier HEMTs, respectively. The proposed InGaN/GaN channel‐based HEMTs are more reliable for high‐frequency linear operation.

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0.1-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math> </inline-formula> InAlN/GaN High Electron-Mobility Transistors for Power Amplifiers Operating at 71–76 and 81–86 GHz: Impact of Passivation and Gate Recess

Cited by 12 publications

References 10 publications

Analysis of Low Voltage RF Power Capability on AlGaN/GaN and InAlN/GaN HEMTs for Terminal Applications

Analysis of Low Voltage RF Power Capability on AlGaN/GaN and InAlN/GaN HEMTs for Terminal Applications

Over 10W/mm High Power Density AlGaN/GaN HEMTs With Small Gate Length by the Stepper Lithography for Ka-Band Applications

L _G 55 nm T‐gate InGaN / GaN channel based high electron mobility transistors for stable transconductance operation

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0.1-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math> </inline-formula> InAlN/GaN High Electron-Mobility Transistors for Power Amplifiers Operating at 71–76 and 81–86 GHz: Impact of Passivation and Gate Recess

Cited by 12 publications

References 10 publications

Analysis of Low Voltage RF Power Capability on AlGaN/GaN and InAlN/GaN HEMTs for Terminal Applications

Analysis of Low Voltage RF Power Capability on AlGaN/GaN and InAlN/GaN HEMTs for Terminal Applications

Over 10W/mm High Power Density AlGaN/GaN HEMTs With Small Gate Length by the Stepper Lithography for Ka-Band Applications

L G 55 nm T‐gate InGaN / GaN channel based high electron mobility transistors for stable transconductance operation

Contact Info

Product

Resources

About

L _G 55 nm T‐gate InGaN / GaN channel based high electron mobility transistors for stable transconductance operation