A method is proposed for measuring high-voltage charging potentials of dielectrics under ion irradiation by shifting the boundary of the bremsstrahlung X-ray spectrum. Since there is no bremsstrahlung output during Xe+ ion irradiation, it was proposed to use a probing electron beam to generate bremsstrahlung X-rays. To eliminate the effect of charge compensation on the surface, the value of the current of the probing probe of electrons was selected. The values of the equilibrium charging potentials of Al2O3 ceramics, Al2O3 sapphire, SiO2, and Teflon are obtained at different ion irradiation energies. The data obtained are compared with the results of spectrometric studies.
To determine the effect of the surface potential of dielectric samples on the yield of positive ions during ion irradiation, we studied the dependence of the current of secondary particles on the thickness of dielectric films. It is shown that the yield of positive secondary particles increases significantly with increasing thickness if the film charging potential does not exceed the breakdown value determined by the electrical strength of the film. An indirect confirmation of the film charging in these experiments is the time dependence of the current from the sample holder. An experimental evaluation of the apparatus effect caused by the emission of secondary electrons from a hemispherical collector has been carried out. Possible mechanisms of the observed phenomena are discussed.
To establish the effect of subthreshold defect formation on the charge accumulation in quartz glasses, a comprehensive study of the process of their electrization by electron beams was carried out. Earlier it was shown that the process of radiative electrization of quartz glasses consists of two stages. The short-term stage of charging can be explained by the accumulation of charge on the initial trap centers, and the long-term component can be caused by the generation of deep trap centers capable of capturing electrons. In the studied quartz samples, the trapping centers can be three-coordinated silicon atoms (E'-centers). The presence of two stages of the charging process is confirmed by two different methods for determining the surface potential. Despite the increase in the surface potential during irradiation and the resulting decrease in the energy of the incident electrons, an increase in the intensity of the cathodoluminescent signal is observed. Such an increase in intensity can be caused by an increase in the number of luminescent defects in quartz, a two-coordinated silicon atom or a non-bridging oxygen atom, as well as by charge accumulation at competing nonradiative trap centers.
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