The effect of gamma radiation on the formation of surface defects at the Si−SiO2 interface in a MOS transistor with a p-channel in the passive mode is considered. Several surface defect formation processes were observed. The role of molecular hydrogen in the gate oxide of the MOS transistor and ”hot“ electrons formed in the near-surface region of silicon is shown.
Проведен анализ двухэтапного процесса поверхностного дефектообразования на границе раздела Si-SiO2 в МОП-транзисторе с n-каналом. Получено, что процесс поверхностного дефектообразования описывается тремя экспоненциальными зависимостями. Представлены качественные модели составляющих процесса поверхностного дефектообразования.
The paper analyzes a two-stage process of surface defects formation at Si-SiO2 in a MOS-transistor with n-channel. The process of surface defects formation has been described by three exponential dependences. High-quality models of the process components have been presented.
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