Wide bandgap halide perovskite materials show promising
potential
to pair with silicon bottom cells. To date, most efficient wide bandgap
perovskites layers are fabricated by spin-coating, which is difficult
to scale up. Here, we report on slot-die coating for an efficient,
1.68 eV wide bandgap triple-halide (3halide) perovskite absorber,
(Cs
0.22
FA
0.78
)Pb(I
0.85
Br
0.15
)
3
+ 5 mol % MAPbCl
3
. A suitable solvent system
is designed specifically for the slot-die coating technique. We demonstrate
that our fabrication route is suitable for tandem solar cells without
phase segregation. The slot-die coated wet halide perovskite is dried
by a “nitrogen (N
2
)-knife” with high reproducibility
and avoiding antisolvents. We explore varying annealing conditions
and identify parameters allowing crystallization of the perovskite
film into large grains reducing charge collection losses and enabling
higher current density. At 150 °C, an optimized trade-off between
crystallization and the PbI
2
aggregates on the film’s
top surface is found. Thus, we improve the cell stability and performance
of both single-junction cells and tandems. Combining the 3halide top
cells with a 120 μm thin saw damage etched commercial Czochralski
industrial wafer, a 2-terminal monolithic tandem solar cell with a
PCE of 25.2% on a 1 cm
2
active area is demonstrated with
fully scalable processes.
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