Perovskite solar cells with dense grains with strong (100) orientation were developed by adding NH4Cl and air blowing.
Abstract:The effects of SbI 3 , PbCl 2 , and NH 4 Cl addition to perovskite CH 3 NH 3 PbI 3 precursor solutions on photovoltaic properties were investigated. TiO 2 /CH 3 NH 3 Pb(Sb)I 3 (Cl)-based photovoltaic devices were fabricated by a spin-coating technique, and the microstructures of the devices were investigated by X-ray diffraction and scanning electron microscopy. Current density-voltage characteristics and incident photon-to-current conversion efficiencies were improved by a small amount of Sb-and Cl-doping, which resulted in improvement of the efficiencies of the devices. The structure analysis indicated formation of a homogeneous microstructure by NH 4 Cl addition with SbI 3 .
Effects of SbI 3 addition to CH 3 NH 3 PbI 3 precursor solutions on the photovoltaic properties were investigated. TiO 2 /CH 3 NH 3 -Pb 1¹x Sb x I 3 -based photovoltaic devices were fabricated in air, and formation of a perovskite-type structure was confirmed by X-ray diffraction. The conversion efficiencies were improved by adding a small amount of Sb, and formation of PbI 2 was suppressed by the Sb addition.Recently, perovskite-type solar cells have been widely studied, 13 because the solar cells consisting of a CH 3 NH 3 PbI 3 compound with the perovskite structure have high photoconversion efficiencies compared with ordinary organic solar cells. Since a conversion efficiency reached 15%, 4 higher efficiencies have been achieved for various device structures and processes, 57 and the photoconversion efficiency increased up to ca. 20%. 811 The photovoltaic properties of the solar cells strongly depend on the crystal structures and the compositions of the perovskite compounds. Halogen and metal atom doping such as chlorine (Cl)/ bromine (Br) and tin (Sn) at the iodine (I) and lead (Pb) sites in the perovskite compounds have been studied, respectively. 813 Especially, studies on metal atom doping at the Pb sites have been carried out for the Pb-free devices, 13 and a detailed search on the metal doping at the Pb sites is interesting for both Pb-free devices and effects on photovoltaic properties.The purpose of the present work is to investigate photovoltaic properties and microstructures of photovoltaic devices with perovskite-type CH 3 NH 3 Pb 1¹x Sb x I 3 compounds, which were prepared by a simple spin-coating technique in air. Antimony (Sb) is the group 15 element, and is expected to work as electronic donors at the sites of the group 14 element lead (Pb). Effects of SbI 3 addition using a mixture solution of perovskite compounds on the photovoltaic properties and microstructures were investigated by light-induced current densityvoltage (JV) curves, incident photon-to-current conversion efficiency (IPCE), and X-ray diffraction (XRD).A schematic illustration for the fabrication of the present TiO 2 /CH 3 NH 3 Pb 1¹x Sb x I 3 photovoltaic cells is shown in Figure 1. The details of the fabrication process are described in the reported papers, 4,1416 except for SbI 3 . F-doped tin oxide (FTO) substrates were cleaned using an ultrasonic bath with acetone and methanol, and dried under nitrogen gas. 0.15 and 0.30 M TiO x precursor solution was prepared from titanium diisopropoxide bis(acetylacetonate) (Sigma-Aldrich, 0.055 and 0.11 mL) with 1-butanol (1 mL), and the 0.15 M TiO x precursor solution was spin-coated on the FTO substrate at 3000 rpm for 30 s and annealed at 125°C for 5 min. Then, the 0.30 M TiO x precursor solution was spincoated on the TiO x layer at 3000 rpm for 30 s and annealed at 125°C for 5 min. This process of 0.30 M solution was performed two times, and the FTO substrate was sintered at 500°C for 30 min to form the compact TiO 2 layer. After that, TiO 2 paste was coated on the substrate by spi...
Effects of NH 4 Cl addition to perovskite CH 3 NH 3 PbI 3 precursor solutions on photovoltaic properties were investigated. TiO 2 / CH 3 NH 3 PbI 3 (Cl)-based photovoltaic devices were fabricated by a spin-coating technique, and the microstructures of the devices were investigated by X-ray diffraction and scanning electron microscopy. Current densityvoltage characteristics were improved by a small amount of Cl-doping, which resulted in improvement of the efficiencies of the devices. The structure analysis indicated formation of a homogeneous microstructure by NH 4 Cl addition to the perovskite phase, and formation of PbI 2 was suppressed by the NH 4 Cl addition.
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