Indium isoelectronic doping was found to have profound effects on electrical properties of GaN films grown by metalorganic chemical vapor deposition. When a small amount of In atoms was introduced into the epilayer, the ideality factor of n-GaN Schottky diode was improved from 1.20 to 1.06, and its calculated saturation current could be reduced by 2 orders of magnitude as compared to that of the undoped sample. Moreover, it is interesting to note that In isodoping can effectively suppress the formation of deep levels at 0.149 and 0.601 eV below the conduction band, with the 0.149 eV trap concentration even reduced to an undetected level. Our result indicates that the isoelectronic In-doping technique is a viable way to improve the GaN film quality.
We report the successful growth of an InN film by metalorganic vapor phase epitaxy. The film quality is found to be strongly dependent on the growth temperature and the TMIn reactant flow rate. The best quality epilayer was obtained at 375°C under a high V/III ratio growth environment. It exhibits a FWHM of the X-ray rocking curve as narrow as 96 arcsec, which explains the superior crystalline quality of our epitaxial film.
Indium nitride films have been successfully grown on (0001) sapphire
substrates by metalorganic vapor phase epitaxy (MOVPE) using TMIn and NH3
as source precursors. Experimental results indicated that pregrowth
treatments, such as buffer layer growth, nitridation temperature and
nitridation duration have dramatic effects on the growth of the InN films. For films
nitridated at 1,000°C for 40 min without any buffer layer growth,
we obtained an InN film quality with Hall mobility, carrier concentration
and line width of Raman E2 mode of 270 cm2/V·s, 5 ×1019 cm-3 and 4.5 cm-1, respectively, which is among the best
quality ever reported for such type of film grown by MOVPE.
The optical and electrical properties of isoelectronic In-doped GaN films grown by metalorganic vapor phase epitaxy (MOVPE) were investigated by X-ray, photoluminescence (PL), Hall and Raman measurements. As a result, adequate Indoping quantity causes not only a reduction of yellow luminescence and unintentional background concentration, but an enhanced mobility and decrease in the widths. The improved crystalline and optical qualities of GaN films may be attributed to the decrease in defects. ᭧
We have studied optical and electronic properties of isoelectronic P-implanted GaN films grown by metalorganic chemical vapor phase epitaxy. After rapid thermal annealing, a strong emission band around 430 nm was observed, which is attributed to the recombination of exciton bound to isoelectronic P-hole traps. From the Arrhenius plot, the hole binding energy of ∼180 meV and the exciton localization energy of 28 meV were obtained. According to first-principle total-energy calculations, the implantation process likely introduced NI and P-related defects. By using photoluminescence excitation technique, we found that the P-implantation-induced localized states not only increase the yellow luminescence but also suppress the transitions from the free carriers to deep levels.
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