Through 172 nm vacuum ultraviolet light irradiation in a high vacuum condition (HV-VUV), well-defined micropatterns with a varied periodic friction were fabricated at the surface of self-assembled monolayers (SAMs) terminated with oxygenated groups. No apparent height contrast between the HV-VUV-irradiated and -masked areas was observed, which indicated the stability of the C-C skeleton of the assembled molecules. The trimming of oxygenated groups occurred through dissociating the C-O bonds and promoting the occurrence of α- and β-cleavages in the C═O-containing components. Hence, the HV-VUV treatment trimmed the oxygenated groups without degrading the C-C skeleton. The HV-VUV treatment influenced the order of the assembled molecules, and the step-terrace structure was distorted. The decrease in friction at the HV-VUV-irradiated domains was attributed to the dissociation of oxygenated groups. (3-Aminopropyl)trimethoxysilane (APTMS) aggregated at the masked areas of the HV-VUV-patterned SAM, where the oxygenated groups worked as anchors. APTMS aggregations did not exist at the irradiated areas, indicating the trimming of the oxygenated groups at these areas. The direct assembling of APTMS on the Si substrate at the irradiated areas was prevented by the remaining C-C skeleton.
We here report a scanning probe method to locally and directly research the electrical properties of vacuum-ultraviolet (VUV) reduced graphene oxide. The measured electrical conductivity of individual VUV-reduced GO (VUV-rGO) sheets by using conductive atomic force microscopy (CAFM) reached 0.20 S·m−1 after 64 min irradiation, which was clearly enhanced compared with the pristine GO. According to the X-ray photoelectron spectroscopy results, the recovered conductivity of VUV-rGO could be ascribed to the partial elimination of oxygen-containing functional groups and the rapid reconstruction of the C=C bonds. Heterogeneously distributed low- and high-conductivity domains (with a diameter of tens of nanometer to ca. 500 nm) were found from current mapping of the VUV-rGO sheet. By applying photomask lithography, rGO regions were drawn into single GO sheet and were researched by CAFM. The in-plane lateral conductivity of rGO regions increased obviously compared with pristine GO regions.
Microprocessing of graphene oxide (GO) films is of fundamental importance in fabricating graphene-based devices. We demonstrate the photoetching of GO sheets using vacuum-ultraviolet (VUV, λ = 172 nm) light under controlled atmospheric pressure. X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and differential interference contrast microscopy (DIC) studies revealed that the photoetching of GO films successfully proceeded in the regions exposed to VUV irradiation in the oxygen-containing atmosphere. Precise photoetching of the GO sheets was achieved at a vacuum pressure of 5 × 10(3) Pa with VUV light irradiation for 20 min. This was followed by VUV irradiation in a high vacuum (<10(-3) Pa) and sonication in water. The photoetched GO sheets then transformed into reduced GO (rGO) patterns. The minimum feature fabricated by this method was 2 μm wide lines aligned at an interval of 4 μm. This method provides a cost-effective way to fabricate rGO patterns with fewer boundaries between rGO sheets and offers a better integrity of rGO, which can be promising for further applications in micro mechanics, micro electrochemistry, optoelectronics, etc.
Pt‐based catalysts are currently the most efficient electrocatalysts for the hydrogen evolution reaction (HER), but the scarcity and high cost of Pt limit industrial applications. Downsizing Pt nanoparticles (NPs) to single atoms (SAs) can expose more active sites and increase atomic utilization, thus decreasing the cost. Here, a solar‐irradiation strategy is used to prepare hybrid SA‐Pt/MoS2 nanosheets (NSs) that demonstrate excellent HER activity (the overpotential at a current density of 10 mA cm−2 (η10) of 44 mV, and Tafel slope of 34.83 mV dec−1 in acidic media; η10 of 123 mV, and Tafel slope of 76.71 mV dec−1 in alkaline media). Defects and deformations introduced by thermal pretreatment of the hydrothermal MoS2 NSs promote anchoring and stability of Pt SAs. The fabrication of Pt SAs and NPs is easily controlled using different Pt‐precursor concentrations. Moreover, SA‐Pt/MoS2 produced under natural sunlight exhibits high HER performance (η10 of 55 mV, and Tafel slope of 43.54 mV dec−1), which indicates its viability for mass production. Theoretical simulations show that Pt improves the absorption of H atoms and the charge‐transfer kinetics of MoS2, which significantly enhance HER activity. A simple, inexpensive strategy for preparing SA‐Pt/MoS2 hybrid catalysts for industrial HER is provided.
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