Herein, the lead-free halide perovskite films with different
Cu-to-Ag
ratios (Cu3–x
Ag
x
SbI6, x = 0, 1, 2, or 3) have
been prepared by a spin-coating method at low temperature. The enhanced
resistive switching (RS) performance of more uniform SET/RESET voltages
and the endurance up to at least 1600 cycles are found in the RS memory
with a device structure of Ag/PMMA/Cu2AgSbI6/ITO. The device performance is not degraded under different bending
angles and after 103 bending cycles, which is beneficial
for flexible memory applications. The appropriately increased activation
energy of the perovskites with the partial substitution of Ag atoms,
which would lead to a more robust filament formed, is proposed to
explain the enhanced RS mechanism. Importantly, the effective size
and number of filaments measured by conductive AFM are introduced
to confirm the multilevel storage effect of Cu2AgSbI6. The multilevel storage characteristics with four resistance
levels are demonstrated by various compliance currents. Moreover,
the Cu2AgSbI6 memory devices still exhibit enhanced
RS properties and multilevel storage after 75 days of exposure to
ambient conditions. Our study provides a strategy for improving the
stability and high-density storage applications of halide perovskite
RS memory devices.
Resistive switching (RS) behavior of lead-free rudorffite perovskite Cu3SbI6 is explored for developing high performance flexible resistive switching random access memory (ReRAM) devices. The Cu3SbI6 based devices exhibit reproducible bipolar nonvolatile RS behaviors with low operating voltage (≤±0.6 V), stable endurance (≥400 cycles), and long data retention time (≥104 s). Moreover, the devices fabricated on flexible substrates show good electrical reliability and mechanical stability under different bending angles and consecutive bending cycles (103 times). A computational study method is used to reveal the mechanical stability of the Cu3SbI6 and the RS properties of the memory devices. More importantly, the Cu3SbI6 based devices exhibit no significant changes in RS behaviors after stored in ambient conditions for over 60 days. The results suggest that devices based on all-inorganic lead-free rudorffite perovskite materials have great potential for high performance, stable, and flexible ReRAM.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.