Two-dimensional (2D) semiconductor materials with discrete bandgap become important because of their interesting physical properties and potentials toward future nanoscale electronics. Many 2D-based field effect transistors (FETs) have thus been reported. Several attempts to fabricate 2D complementary (CMOS) logic inverters have been made too. However, those CMOS devices seldom showed the most important advantage of typical CMOS: low power consumption. Here, we adopted p-WSe2 and n-MoS2 nanosheets separately for the channels of bottom-gate-patterned FETs, to fabricate 2D dichalcogenide-based hetero-CMOS inverters on the same glass substrate. Our hetero-CMOS inverters with electrically isolated FETs demonstrate novel and superior device performances of a maximum voltage gain as ∼27, sub-nanowatt power consumption, almost ideal noise margin approaching 0.5VDD (supply voltage, VDD=5 V) with a transition voltage of 2.3 V, and ∼800 μs for switching delay. Moreover, our glass-substrate CMOS device nicely performed digital logic (NOT, OR, and AND) and push-pull circuits for organic light-emitting diode switching, directly displaying the prospective of practical applications.

We have fabricated dual gate field effect transistors (FETs) with 12 nm-thin black phosphorus (BP) channel on glass substrate, where our BP FETs have a patterned-gate architecture with 30 nm-thick Al2O3 dielectrics on top and bottom of a BP channel. Top gate dielectric has simultaneously been used as device encapsulation layer, controlling the threshold voltage of FETs as well when FETs mainly operate under bottom gate bias. Bottom, top, and dual gate-controlling mobilities were estimated to be 277, 92, and 213 cm(2)/V s, respectively. Maximum ON-current was measured to be ∼5 μA at a drain voltage of -0.1 V but to be as high as ∼50 μA at -1 V, while ON/OFF current ratio appeared to be 3.6 × 10(3) V. As a result, our dual gate BP FETs demonstrate organic light emitting diode (OLED) switching for green and blue OLEDs, also demonstrating NOR logic functions by separately using top- and bottom-input.

3146 wileyonlinelibrary.com disulfi de (MoS 2 ) and tungsten dislenide (WSe 2 ) are typesetting materials showing n-and p-type dominant conductions, respectively. [7][8][9][10][11] As one of quite recent 2D TMD materials, molybdenum ditelluride (α-MoTe 2 ) has also been attracting attention due to its optical and electrical properties. Monolayer α-MoTe 2 exhibits a direct optical bandgap of 1.10 eV, while its bulk form becomes an indirect semiconductor with the band gap of 0.85-1.0 eV. [12][13][14] Interestingly, it is reported that MoTe 2 shows structural and electronic phase transition. The structural phase transition from hexagonal (2H) phase to monoclinic (distorted octahedral or 1T) phase is reversible at a high temperature. [ 15 ] According to literatures, [16][17][18][19][20] few-layered α-MoTe 2 fi eld effect transistors (FETs) showed ambipolar type conduction with broad range of mobilities in 0.2-30 cm 2 V −1 s −1 for both electrons and holes, depending on the source/drain (S/D) contact electrodes, gate dielectrics, and their process conditions. Contact resistance and dielectric/ MoTe 2 channel interface are certainly affecting factors for the electrical performances of a few-layer α-MoTe 2 FETs.In the present work, we have fabricated all-2D α-MoTe 2 -based FETs on glass, using a few tens nm-thin hexagonal boron nitride (h-BN) and a few layer-thin graphene in consideration of good dielectric/channel interface and S/D contacts, respectively. Very few but similar attempts for all 2D FETs were conducted with MoS 2 and WSe 2 nanosheets. [ 21,22 ] Here, distinguished from previous works, our all-2D FETs with α-MoTe 2 nanofl akes are dual-gated for driving higher current, using two h-BN layers for top and bottom dielectrics. Moreover, for our 2D dual gate FET fabrications on glass, all thermal annealing and lithography processes were intentionally exempted. This means that our dual gate 2D FETs may be formed in a fully non-lithographic method by using only van der Waal's forces. Our dual-gate α-MoTe 2 FET displays quite a high hole and electron mobility over ≈20 cm 2 V −1 s −1 along with ON/OFF ratio of ≈10 5 in maximum as an ambipolar FET and also demonstrates drain current as high as a few tens-to-hundred µA at a low drain voltage of −2 V, which appears enough to switch organic light emitting diodes (OLEDs) for blue light. Non-Lithographic Fabrication of All-2D α-MoTe 2 Dual Gate TransistorsKyunghee Choi , Young Tack Lee , Jin Sung Kim , Sung-Wook Min , Youngsuk Cho , Atiye Pezeshki , Do Kyung Hwang , * and Seongil Im * As one of the emerging new transition-metal dichalcogenides materials, molybdenum ditelluride (α-MoTe 2 ) is attracting much attention due to its optical and electrical properties. This study fabricates all-2D MoTe 2 -based fi eld effect transistors (FETs) on glass, using thin hexagonal boron nitride and thin graphene in consideration of good dielectric/channel interface and source/drain contacts, respectively. Distinguished from previous works, in this study, all 2D FETs with α-MoTe 2 na...

We performed a meta-analysis to compare the impact of extracorporeal cardiopulmonary resuscitation (ECPR) to that of conventional cardiopulmonary resuscitation (CCPR) in adult patients who experience cardiac arrest of cardiac origin. A literature search was performed using criteria set forth in a predefined protocol. Report inclusion criteria were that ECPR was compared to CCPR in adult patients with cardiac arrest of cardiac origin, and that survival and neurological outcome data were available. Exclusion criteria were reports describing non-cardiac origin arrest, review articles, editorials, and nonhuman studies. The efficacies of ECPR and CCPR were compared in terms of survival and neurological outcome. A total of 38,160 patients from 7 studies were ultimately included. ECPR showed similar survival (odds ratio [OR] 2.26, 95% confidence interval [CI] 0.45–11.20) and neurologic outcomes (OR 3.14, 95% CI 0.66–14.85) to CCPR in out-of-hospital cardiac arrest patients. For in-hospital cardiac arrest (IHCA) patients, however, ECPR was associated with significantly better survival (OR 2.40, 95% CI 1.44–3.98) and neurologic outcomes (OR 2.63, 95% CI 1.38–5.02) than CCPR. Hence, ECPR may be more effective than CCPR as an adjuvant therapy for survival and neurologic outcome in cardiac-origin IHCA patients.

By using the LC-CUSUM test, we were able to quantitatively monitor the acquisition of the skill of ETI by EM residents. The LC-CUSUM could be useful for monitoring the learning process for the training of airway management in the practice of EM.