A ferroelectric (Bi,La) 4 Ti 3 O 12 (BLT) thin film fabricated by the pulsed-DC sputtering method was evaluated on a cell structure to check its compatibility to high density ferroelectric random access memory (FeRAM) devices. The BLT composition in the sputtering target was Bi 4.8 La 1.0 Ti 3.0 O 12 . Firstly, a BLT film was deposited on a buried Pt/IrO x /Ir bottom electrode stack with W-plug connected to the transistor in a lower place. Then, the film was finally crystallized at 700℃ for 30 seconds in oxygen ambient. The annealed BLT layer was found to have randomly oriented and small ellipsoidal-shaped grains (long direction: ~100 nm, short direction: ~20 nm). The small and uniform-sized grains with random orientations were considered to be suitable for high density FeRAM devices.
The (Na0.52K0.44)(Nb0.9Sb0.06)O3-0.04dLiTaO3 (NKNS-LT) ceramics with various Cu2O concentration were prepared by the conventional solid state reaction method. The Cu2O content was varied in the range of 0.1~0.4 wt%. The effects of Cu on microstructure, crystallographic phase transition, and piezoelectric properties were investigated. The material with perovskite structure had a tetragonal phase (T1) when Cu2O concentration was less than 0.3 wt% and it transformed to another tetragonal phase (T2) when the Cu2O amount was greater than 0.3 wt%. The phase boundary between T1 and T2 phases appeared at around 0.3 wt% of Cu2O concentration. The piezoelectric properties were shown the maximum values at the composition of the phase boundary. The electro-mechanical coupling factor (kp) was 0.42 and the piezoelectric charge constant (d33) was 245 pC/N at the 0.3 wt% of Cu2O concentration.
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