Polarization sensitivity is a severe problem in photonic integration devices and chips based on the high-index contrast Si/SiO 2 system. In this paper, a broadband silicon polarization splitter-rotator (PSR) comprised of a bi-level taper and a counter-tapered coupler is proposed with a large fabrication tolerance. The measured insertion loss is lower than 0.7 dB/0.73 dB for the wavelength range from 1470 to 1580 nm with a crosstalk lower than −12.1 dB/−14.7 dB for TE and TM polarization input, respectively. By integrating the PSR with silicon arrayed waveguide gratings and germanium photodetectors (PDs) on a single chip, a polarization-insensitive wavelength-division-multiplexing (WDM) receiver is demonstrated with a polarization-dependent loss as low as 1.21 dB. High-speed operations are also achieved with clear eyes at 10 Gb/s.
Articles you may be interested inEnhanced optical property in quaternary GaInAsSb/AlGaAsSb quantum wells J. Appl. Phys. 116, 153504 (2014); 10.1063/1.4898389 Demonstration of lighthole behavior in quaternary GaInAsSb/AlGaAsSb quantum wells using infrared photoluminescence spectroscopy Appl. Phys. Lett. 69, 952 (1996); 10.1063/1.117092 Erratum: Photoluminescence of quaternary GaInAsSb/AlGaAsSb strained multiple quantum wells [J. Appl.
Temperaturedependent exciton behavior in quaternary GaInAsSb/AlGaAsSb strained single quantum wellsWe report the dependence on the excitation power and temperature of the photoluminescence emission from a quaternary Gao,751no,25Asa,Sbo,~~Alo.22Gao.78As,o~s strained multiplequantum-well structure grown by molecular-beam epitaxy. Sharp exciton resonances are observed up to room temperature and have been attributed to localized excitons for temperatures S80-100 K and to free excitons at higher temperatures up to room temperature by a comparative study with temperature-dependent absorption spectroscopy. We conclude that the dominant luminescence quenching mechanism in this quaternary system is mainly due to the trapped excitons thermalizing from the localized regions below 100 K, and the thermal carrier activation from the first electron and heavy-hole subbands to the second electron and heavy-hole subbands at higher temperatures. 0 I995 American Institute of Physics.
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