The electrical properties of evaporated ZnTe films were investigated with emphasis on the effects of an annealing temperature from 600oC to 800oC by RTA technique. Crystallinity, carrier concentration, sheet resistance, and mobility are shown to be dependent on the annealing temperature. The highest carrier concentration and lowest sheet resistance are 7.9×1015cm-3and 9300 Ω/□ at an annealing temperature of 700oC, respectively. The mobility was found to vary from 20 to 50 cm2V-1S-1. The ZnTe thin films using thermal evaporation can find applications in solar cell or light emitting diodes
Thermal coating growth of ZnTe thermoelectric films were deposited on n-type Si substrate is studied. Structural analysis through x-ray diffraction (XRD) and scanning electron microscopy (SEM) were sensitive to the RTA treatment. The electrical properties and microstructure of these films were investigated with special emphasis on the effects of various annealing temperatures from 600°C to 800°C by RTA technique. The highest carrier concentration, lowest resistivity and mobility at an annealing temperature of 700°C are 3.5×1015cm-3, 0.25 Ω-cm, and 49 cm2V-1S-1. The resultant electrical properties have made ZnTe films as very interesting materials for thermoelectric device applications.
The microstructure and electrical properties of ZnTe films were investigated by using thermal evaporation with emphasis on the effects of a deposition temperature. Microstructure, crystallinity, carrier concentration, resistivity, and mobility are shown to be dependent on the deposition temperature. The highest carrier concentration of 9.1×1014 cm-3, the lowest resistivity of 9.9 Ω-cm and the largest mobility of 667 cm2V-1S-1 are presented at a deposition temperature of 580oC, respectively. The ZnTe thin films using thermal evaporation can find applications in solar cell or light emitting diodes.
Based on a new micro programmable grating with changeable blazed angle, the control system was recently designed and developed, enabling the normal operation for the fabricated grating. The basic requirements for the control system are high reliability, efficiency and miniaturization. This paper presents the specific design objectives for the control system according to the grating’s operation characteristics. The whole control system contains three key modules—generator & communication module, high-voltage amplifier module and computer software module. Generator & communication module includes a high-performance microcontroller (C8051F020), a D/a converter (AD7305) and universal serial bus (USB) interface. As for the considered performances, PA69 is complete capable of magnifying the driving voltage signals to drive the grating in high-voltage amplifier module. After the development of the control system, an experiment was performed for investigating the dynamic frequency response of the grating. In conclusion, it has the advantages of wide output of voltage, high frequency response, driving ability in wide capacitive load range and real-time control properties. Hence, it is appropriate for controlling MEMS programmable grating in complicated and dynamic conditions.
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