In this work, solution based metal-oxide TFT with BCE structure is successfully implemented in TFT-LCD production line. The well-known slot-die coating technology is used to deposit liquid phase semiconductor on Gen4.5 substrates. Finally, a 5.5 inch TFT LCD driven by solution metal oxide TFT was successfully demonstrated.
High performance N-type organic TFTs have been fabricated at relatively low temperature (100 o C) by spin coating and the electrical performance investigated. Furthermore, the these bias stress stability of these devices using different protocols were also explored. Our results reveal that organic TFTs could be adopted as a potential switch candidate driving display backplanes. IntroductionIn recent years, displays fabricated on flexible substrates have attracted intensively attentions owing to their potential wide applications in electronics. Organic thin-film transistor (OTFT) is a promising candidate for flexible display backplane due to its low-cost and low-temperature manufacturing processes and mechanical robustness. The performance of OTFTs has been improving dramatically over the past years [1][2][3], and numerous studies have addressed display applications of OTFTs [4][5].Nonetheless, the lower field effect mobility and I on /I off ratio versus conventional inorganic TFTs limit the application of OTFTs. Not only the mobility and I on /I off ratio but also the higher operating voltages (20~100 V) are also a bottleneck and improvements are needed. Although the field effect mobility was improved by using pentacene-based materials, the patterning for OSC is also a critical issue for the fabrication of OTFT circuits. One of the reasons for the higher OTFT operating voltages is the limited performance of the organic gate insulator layer. Compared to traditional gate insulators used in a-Si:H TFTs, the organic gate insulator has lower dielectric constant than SiOx and SiNx and greater thikness, resulting in reduced gate capacitance.In this paper, organic TFTs fabricated with a Polyera n-type organic semiconductor were fabricated by spin coating and processed at low temperatures (100 o C). The operating voltages of these organic TFTs were improved, enabling a -20 ~ 20 voltage window. The field effect mobility, threshold voltage and I on /I off were 0.27 cm 2 /V-sec, -1.1 V, and 6x10 6 , respectively. The electrical performance of our OTFTs are similar to those of a-Si:H TFTs and could be utilized as a panel switch. Furthermore, initial results on the corresponding bias stress performance for our organic TFTs are also presented in this paper. ExperimentsThe infrastructure of our designed OTFT is based on the top gate / bottom contact architecture, and all the materials were provided by Polyera Corporation. The substrate was OA-10G glass that without containing any alkali components to satisfy the eco-friendly requirement. The glass was initially cleaned by acetone and isopropyl alcohol (IPA) prior device fabrication. The B2000 E solution was deposited on the substrate through spin coating with 2000 rpm for 30 seconds to function as a buffer layer. After coating the buffer layer, the exposure process is set at 8000 mJ/cm 2 under 365 nm wavelength to ensure the fully crosslinking of the thin film. Then, a 50-nm thick Ag layer was deposited by thermal evaporating followed by being patterned as a source and d...
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
hi@scite.ai
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.