Near-infrared luminescent materials exhibit unique photophysical properties that make them crucial components in photonic, optoelectronic and biological applications. As broadband near infrared phosphors activated by transition metal elements are already widely reported, there is a challenge for next-generation materials discovery by introducing rare earth activators with 4f-5d transition. Here, we report an unprecedented phosphor K3LuSi2O7:Eu2+ that gives an emission band centered at 740 nm with a full-width at half maximum of 160 nm upon 460 nm blue light excitation. Combined structural and spectral characterizations reveal a selective site occupation of divalent europium in LuO6 and K2O6 polyhedrons with small coordination numbers, leading to the unexpected near infrared emission. The fabricated phosphor-converted light-emitting diodes have great potential as a non-visible light source. Our work provides the design principle of near infrared emission in divalent europium-doped inorganic solid-state materials and could inspire future studies to further explore near-infrared light-emitting diodes.
Phosphor-converted white LEDs rely on combining a blue-emitting InGaN chip with yellow and red-emitting luminescent materials. The discovery of cyan-emitting (470–500 nm) phosphors is a challenge to compensate for the spectral gap and produce full-spectrum white light. Na 0.5 K 0.5 Li 3 SiO 4 :Eu 2+ (NKLSO:Eu 2+ ) phosphor was developed with impressive properties, providing cyan emission at 486 nm with a narrow full width at half maximum (FWHM) of only 20.7 nm, and good thermal stability with an integrated emission loss of only 7% at 150 °C. The ultra-narrow-band cyan emission results from the high-symmetry cation sites, leading to almost ideal cubic coordination for UCr 4 C 4 -type compounds. NKLSO:Eu 2+ phosphor allows the valley between the blue and yellow emission peaks in the white LED device to be filled, and the color-rendering index can be enhanced from 86 to 95.2, suggesting great applications in full-spectrum white LEDs.
The development of highly efficient and thermally stable broadband near‐infrared (NIR) luminescence materials is a great challenge to advance the next‐generation smart NIR light source. Benefitting from the low phonon energy and relatively weak electron phonon coupling effect of the fluoride, K2NaScF6:Cr3+ phosphor is designed and obtained, which demonstrates a full width at half maximum of 100 nm peaking at ≈765 nm. Upon blue light excitation, the phosphor exhibits a high quantum efficiency of 74% and its emission intensity at 150 °C can keep 89.6% of the initial value at 25 °C. An NIR output power of 159.72 mW (input electric power, 1094 mW) with a high photoelectric conversion efficiency of ≈14.60%, light‐emitting diode (LED) device is presented based on this K2NaScF6:Cr3+ phosphor. Furthermore, applying the high‐power NIR phosphor‐converted LED device as lighting source, clear and quick veins imaging and recognition in fingers, palm, wrist, and arm of the human hand are first realized, suggesting K2NaScF6:Cr3+ phosphor has high promise in practical applications.
The discovery of highly efficient broadband near infrared (NIR) emission material is urgent and crucial for constructing NIR lighting sources and emerging applications. Herein, a series of NIR emission hexafluorides A2BMF6:Cr3+ (A = Na, K, Rb, Cs; B = Li, Na, K, Cs; M = Al, Ga, Sc, In) peaking at ≈733–801 nm with a full width at half maximum (FWHM) of ≈98–115 nm are synthesized by a general ammonium salt assisted synthesis strategy. Benefiting from the pre‐ammoniation of the trivalent metal sources, the Cr3+ can be more efficiently doped into the A2BMF6 and simultaneously prevent the generation of the competitive phase. Particularly, Na3ScF6:Cr3+ (λem = 774 nm, FWHM ≈ 108 nm) with optimal Cr3+‐doping concentration of 35.96% shows a high internal quantum efficiency of 91.5% and an external quantum efficiency of ≈40.82%. A lighting emitting diode (LED) device with a NIR output power of ≈291.05 mW at 100 mA driven current and high photoelectric conversion efficiency of 20.94% is fabricated. The general synthesis strategy opens up new avenues for the exploration of Cr3+‐doped high efficiency phosphors, and the as‐obtained record NIR output power demonstrates for NIR LED lighting sources applications.
A robust and stable narrow-band green emitter is recognized as a key enabler for wide-color-gamut liquid crystal display (LCD) backlights. Herein, an emerging rare earth silicate phosphor, RbNa(Li 3 SiO 4 ) 2 :Eu 2+ (RN:Eu 2+ ) with exceptional optical properties and excellent thermal stability, is reported. The resulting RN:Eu 2+ phosphor presents a narrow green emission band centered at 523 nm with a full width at half maximum of 41 nm and excellent thermal stability (102%@425 K of the integrated emission intensity at 300 K). RN:Eu 2+ also shows a high quantum efficiency, an improved chemical stability, and a reduced Stokes shift owing to the modified local environment, in which [NaO 8 ] cubes replace [LiO 4 ] squares in RbLi(Li 3 SiO 4 ) 2 :Eu 2+ via polyhedron transformation. White light-emitting diode (wLED) devices with a wide color gamut (113% National Television System Committee (NTSC)) and high luminous efficacy (111.08 lm W −1 ) are obtained by combining RN:Eu 2+ as the green emitter, K 2 SiF 6 :Mn 4+ as the red emitter, and blue-emitting InGaN chips. Using these wLEDs as backlights, a prototype 20.5 in. LCD screen is fabricated, demonstrating the bright future of stable RN:Eu 2+ for wide-colorgamut LCD backlight application.
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