Photodetectors capture optical signals with a wide range of incident photon flux density and convert them to electrical signals instantaneously. They have many important applications including imaging, optical communication, remote control, chemical/biological sensing and so on. Currently, GaN, Si and InGaAs photodetectors are used in commercially available products. Here we demonstrate a novel solution-processed photodetector based on an organic-inorganic hybrid perovskite material. Operating at room temperature, the photodetectors exhibit a large detectivity (the ability to detect weak signals) approaching 10 14 Jones, a linear dynamic range over 100 decibels (dB) and a fast photoresponse with 3-dB bandwidth up to 3 MHz. The performance is significantly better than most of the organic, quantum dot and hybrid photodetectors reported so far; and is comparable, or even better than, the traditional inorganic semiconductor-based photodetectors. Our results indicate that with proper device interface design, perovskite materials are promising candidates for low-cost, high-performance photodetectors.
The creation of new organic-inorganic phototransistors with high and broad spectral photosensitivity is reported. The extended charge transport and photoconductivity between the layers in the bilayer structure results in a notable detectivity of over 10(12) Jones and a linear dynamic range of over 100 dB at a broad spectral bandwidth across the UV-NIR range. Furthermore, the considerably reduced persistent photocurrent effect of In-Ga-Zn-O (IGZO)-based hybrid phototransistors is first demonstrated via an organic-inorganic bilayer approach.
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