Thin films of CdTe were obtained by vapor phase condensation, namely by open vacuum evaporation, using different technological factors, in particular, different thickness (different time of deposition t) d = (540 -2835) nm, deposition temperature T v = 200°C and evaporator temperature T e (500 -600)°C. The films were deposited on silicon substrates. The morphology of thin film condensates is determined on the basis of ASM and SEM studies analysis. Were received dependences of avarage roughness and root mean square roughness from the material of substrate and film thickness. It was established that the growth of surface nanostructures is determined by Strankі-Krastanov mechanism.Кeywords: cadmium telluride, thin films, nanostructures, growth processes.Стаття поступила до редакції 15.09.2017; прийнята до друку 05.12.2017.
Developed a comprehensive system for generating of electric energy "Thermoelectric generator -solar collector". The Sb doped PbTe (n-type of conductivity) and triple compound PbSnTe (p-type of conductivity) were synthesized as basic materials for thermocouples.
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