Nanocrystals of group-IV semiconductor materials (Si, Ge, and SiGe) have been fabricated in SiO2 by ion implantation and subsequent thermal annealing. The microstructure of these nanocrystals has been studied by transmission electron microscopy. Critical influences of the annealing temperatures and implantation doses on the nanocrystal size distributions are demonstrated with the Ge-implanted systems. Significant roughening of the nanocrystals occurs when the annealing temperature is raised above the melting temperature of the implanted semiconductor material.
The first unambiguous evidence is presented that H ions are the main electron traps responsible for the long-lived phosphorescence observed at 2.3 ev near room temperature in thermochemically reduced MgO.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.