Poly[(9,))] (TFB) has been widely used as a hole transport layer (HTL) material in cadmium-based quantum dot lightemitting diodes (QLEDs) because of its high hole mobility. However, as the highest occupied molecular orbital (HOMO) energy level of TFB is −5.4 eV, the hole injection from TFB to the quantum dot (QD) layer is higher than 1.5 eV. Such a high oxidation potential at the QD/HTL interface may seriously degrade the device lifetime. In addition, TFB is not resistant to most solvents, which limits its application in inkjet-printed QLED display. In this study, the blended HTL consisting of TFB and cross-linkable small molecular 4,4′-bis(3-vinyl-9H-carbazol-9-yl)-1,1′-biphenyl (CBP-V) was introduced into red QLEDs because of the deep HOMO energy level of CBP-V (−6.2 eV). Compared with the TFB-only devices, the external quantum efficiency (EQE) of devices with the blended HTL improved from 15.9 to 22.3% without the increase of turn-on voltage for spin-coating-fabricated devices. Furthermore, the blended HTL prolonged the T90 and T70 lifetime from 5.4 and 31.1 to 39.4 and 148.9 h, respectively. These enhancements in lifetime are attributed to the low hole-injection barrier at the HTL/QD interface and high thermal stability of the blended HTL after cross-linking. Moreover, the cross-linked blended HTL showed excellent solvent resistance after crosslinking, and the EQE of the inkjet-printed red QLEDs reached 16.9%.
Quantum dots light‐emitting diodes (QLEDs) have attracted much interest owing to their compatibility with low‐cost inkjet printing technology and potential for use in large‐area full‐color pixelated display. However, it is challenging to fabricate high efficiency inkjet‐printed QLEDs because of the coffee ring effects and inferior resistance to solvents from the underlying polymer film during the inkjet printing process. In this study, a novel crosslinkable hole transport material, 4,4′‐bis(3‐vinyl‐9H‐carbazol‐9‐yl)‐1,1′‐biphenyl (CBP‐V) which is small‐molecule based, is synthesized and investigated for inkjet printing of QLEDs. The resulting CBP‐V film after thermal curing exhibits excellent solvent resistance properties without any initiators. An added advantage is that the crosslinked CBP‐V film has a sufficiently low highest occupied molecular orbital energy level (≈−6.2 eV), high film compactness, and high hole mobility, which can thus promote the hole injection into quantum dots (QDs) and improve the charge carrier balance within the QD emitting layers. A red QLED is successfully fabricated by inkjet printing a CBP‐V and QDs bilayer. Maximum external quantum efficiency of 11.6% is achieved, which is 92% of a reference spin‐coated QLED (12.6%). This is the first report of such high‐efficiency inkjet‐printed multilayer QLEDs and demonstrates a unique and effective approach to inkjet printing fabrication of high‐performance QLEDs.
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